公开(公告)号：US12224038B2

公开(公告)日：2025-02-11

申请号：US18191903

申请日：2023-03-29

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Kuan-Chih Chen ,  Chia-Hong Lee ,  Ming-Hsiu Lee

IPC: G11C11/409 ,  G11C7/10 ,  G11C11/54

Abstract: A memory device and an intelligent operation method thereof are provided. The memory device includes a memory array, a signal generating circuit, an environment detecting circuit and an artificial intelligence (AI) circuit. The signal generating circuit is configured to generate an inputting signal. The environment detecting circuit is configured to detect at least one environment information. The AI circuit is connected among the memory array, the signal generating circuit and the environment detecting circuit. The AI circuit at least receives the inputting signal from the signal generating circuit, receives the environment information from the environment detecting circuit, receives a first performance information from the memory array, receives a second performance information from the AI circuit and outputs an ideal signal to the memory array according to the inputting signal, the environment information, the first performance information and the second performance information.

公开(公告)号：US11322207B1

公开(公告)日：2022-05-03

申请号：US17137461

申请日：2020-12-30

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Cheng-Hsien Cheng ,  Yu-Hung Huang ,  Chia-Hong Lee ,  Yin-Jen Chen

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  G11C16/24

Abstract: A program method for a memory device is provided. The memory device includes a plurality of memory cells, a bit line and word lines electrically connected to the plurality of memory cells. The plurality of memory cells includes a selected memory cell and unselected memory cells when the memory device is in a program operation. The program method including performing precharge steps, performing program steps and performing a verification step to the selected memory cell after the precharge steps and the program steps. Each of the precharge steps includes applying a precharge voltage to the bit line electrically connected to the unselected memory cells. Each of the program steps includes applying a program voltage to a word line of the word lines electrically connected to the selected memory cell.