公开(公告)号：US09754637B2

公开(公告)日：2017-09-05

申请号：US15212340

申请日：2016-07-18

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yu-Ming Chang ,  Hsiang-Pang Li ,  Hsin-Yu Chang ,  Chien-Chung Ho ,  Yuan-Hao Chang

IPC: G11C7/00 ,  G11C16/00 ,  G11C16/16 ,  G11C16/14

CPC classification number: G11C7/00 ,  G11C16/14 ,  G11C16/16

Abstract: An erasing method and a memory device are provided. The memory device includes a plurality of memory blocks. Each of the memory blocks has n sub-blocks. The erasing method includes the following steps. A first erase region is selected from a first memory block of the memory blocks, and the first erase region includes at least one sub-block. A sub-block erase operation is performed on the first erase region of the first memory block.

公开(公告)号：US20170148493A1

公开(公告)日：2017-05-25

申请号：US15212340

申请日：2016-07-18

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yu-Ming Chang ,  Hsiang-Pang Li ,  Hsin-Yu Chang ,  Chien-Chung Ho ,  Yuan-Hao Chang

IPC: G11C7/00

CPC classification number: G11C7/00 ,  G11C16/14 ,  G11C16/16

Abstract: An erasing method and a memory device are provided. The memory device includes a plurality of memory blocks. Each of the memory blocks has n sub-blocks. The erasing method includes the following steps. A first erase region is selected from a first memory block of the memory blocks, and the first erase region includes at least one sub-block. A sub-block erase operation is performed on the first erase region of the first memory block.