公开(公告)号：US11271155B2

公开(公告)日：2022-03-08

申请号：US16814372

申请日：2020-03-10

Applicant: International Business Machines Corporation ,  Macronix International Co., Ltd.

Inventor： Cheng-Wei Cheng ,  Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L45/00 ,  H01L27/24

Abstract: An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.

公开(公告)号：US10374009B1

公开(公告)日：2019-08-06

申请号：US16038072

申请日：2018-07-17

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  Hsiang-Lan Lung ,  I-Ting Kuo

IPC: H01L27/24 ,  H01L45/00

Abstract: A voltage sensitive switching device has a first electrode, a second electrode, and a switching layer between the first and second electrodes, comprising a tellurium free, low germanium composition of arsenic As, selenium Se and germanium Ge. The switching device is used in 3D cross-point memory.

公开(公告)号：US10541271B2

公开(公告)日：2020-01-21

申请号：US15787274

申请日：2017-10-18

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  Hsiang-Lan Lung ,  I-Ting Kuo

IPC: H01L27/24 ,  H01L45/00

Abstract: A voltage sensitive switching device is described having a superlattice-like cell structure comprising layers of ovonic materials, such as chalcogenide alloys. Memory cells can include the switching device, such as can be utilized in a cross-point memory.

公开(公告)号：US11289540B2

公开(公告)日：2022-03-29

申请号：US17205767

申请日：2021-03-18

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L27/24

Abstract: An ovonic threshold switch includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.

公开(公告)号：US20210288251A1

公开(公告)日：2021-09-16

申请号：US16814372

申请日：2020-03-10

Applicant: International Business Machines Corporation ,  Macronix International Co., Ltd.

Inventor： Cheng-Wei Cheng ,  Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L45/00 ,  H01L27/24

Abstract: An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.

公开(公告)号：US11355552B2

公开(公告)日：2022-06-07

申请号：US16986316

申请日：2020-08-06

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L27/24 ,  H01L45/00

Abstract: A memory material and a memory device applying the same are provided. The memory material is a chalcogenide doped with carbon atom. The chalcogenide contains arsenic (As) atom, selenium (Se) atom, germanium (Ge) atom and silicon (Si) atom.

公开(公告)号：US11158787B2

公开(公告)日：2021-10-26

申请号：US16716948

申请日：2019-12-17

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: A voltage sensitive switching device has a first electrode, a second electrode, and a switching layer between the first and second electrodes, comprising a composition of carbon C, arsenic As, selenium Se and germanium Ge thermally stable to temperatures over 400° C. The switching device is used in 3D crosspoint memory.

公开(公告)号：US10978511B1

公开(公告)日：2021-04-13

申请号：US16601647

申请日：2019-10-15

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.