公开(公告)号：US11010244B2

公开(公告)日：2021-05-18

申请号：US16571260

申请日：2019-09-16

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yung-Chun Li ,  Ping-Hsien Lin ,  Kun-Chi Chiang ,  Chien-Chung Ho

IPC: G06F11/00 ,  G06F11/30 ,  G08C25/00 ,  H03M13/00 ,  H04L1/00 ,  G06F11/10 ,  G06F11/07 ,  G11C11/4074 ,  G11C11/409

Abstract: A memory data management method includes the following steps reading a plurality of data of a plurality of memory cells of a memory block; determining whether error bits of the data exceed an error correction code (ECC) threshold; if the error bits of the data exceed the ECC threshold, a programming process being executed to increase a first threshold voltage of a first state data of the data for exceeding a first threshold, to increase a second threshold voltage of a second state data of the data for exceeding a second threshold, and to increase a third threshold voltage of a third state data of the data for exceeding a third threshold.