公开(公告)号：US11081595B1

公开(公告)日：2021-08-03

申请号：US16877518

申请日：2020-05-19

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Cheng-Lin Sung ,  Pei-Ying Du ,  Hang-Ting Lue

IPC: G11C16/04 ,  H01L29/788 ,  G11C11/56 ,  H01L29/792

Abstract: A multi-gate transistor includes: a doped drain region; a doped source region; a gate group including a first gate and a second gate; a channel, the doped drain region and the doped source region being on respective two sides of the channel; and an interlayer, formed between the channel and the gate group, wherein a first gate voltage and a second gate voltage are applied to the first gate and the second gate of the gate group, respectively, the channel is induced as at least a P sub-channel and at least an N sub-channel and the multi-gate transistor equivalently behaves as a PNPN structure.