公开(公告)号：US20230240062A1

公开(公告)日：2023-07-27

申请号：US17746996

申请日：2022-05-18

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Sheng-Ting FAN ,  Wei-Chen CHEN ,  Hang-Ting LUE

IPC: H01L27/108 ,  H01L23/528

CPC classification number: H01L27/10802 ,  H01L23/5283

Abstract: A memory structure includes a substrate; a first gate structure, a second gate structure and a third gate structure disposed on the substrate, separated from each other along the first direction and respectively extending along the second direction and the third direction; channel bodies separated from each other and passing through the first gate structure, the second gate structure and the third gate structure along the first direction; dielectric films disposed between the first gate structure, the second gate structure, the third gate structure and the channel bodies; and a first side plug electrically connected to the substrate and the channel bodies. The first gate structure, the second gate structure and the third gate structure surround each of the dielectric films and each of the channel bodies, and the dielectric films do not include a charge storage structure.