公开(公告)号：US20200234770A1

公开(公告)日：2020-07-23

申请号：US16254933

申请日：2019-01-23

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Teng-Hao YEH ,  Yi Ching LIU

IPC: G11C16/24 ,  H03K19/20 ,  G11C16/04 ,  G11C16/30

Abstract: A memory device is described with NAND strings and corresponding BL connected to SSL, a first power supply circuit, a second power supply circuit to distribute a higher supply voltage than the first power supply circuit, and a page buffer that generates program/inhibit outputs having a level between the first power supply voltage and a first reference voltage. Data line drivers drive nodes coupled to corresponding BL with a first voltage or a second voltage between the second power supply voltage and a second reference voltage. A data line driver includes a first switch transistor connected between the data line node and the second power supply circuit, a second switch transistor between the data line node and the second voltage reference, and a boost circuit to boost the gate of the first switch transistor above the first supply voltage level to turn on the first switch transistor.