Circuit and method for read latency control

    公开(公告)号:US10475492B1

    公开(公告)日:2019-11-12

    申请号:US16047550

    申请日:2018-07-27

    Abstract: A memory device comprises an array of memory cells, and a plurality of sense amplifiers coupled with the memory cells. A controller is configured to execute a read operation in response to a command and address, including a read cycle in which the memory cells at the address are electrically coupled to the sense amplifiers, and in which the memory cells at the address are electrically decoupled from the sense amplifiers in response to a timing signal.

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