APPARATUS AND METHOD FOR IN-SITU MONITORING OF WAFER BONDING TIME
    1.
    发明申请
    APPARATUS AND METHOD FOR IN-SITU MONITORING OF WAFER BONDING TIME 有权
    WAFER粘结时间的现场监测装置及方法

    公开(公告)号:US20080285059A1

    公开(公告)日:2008-11-20

    申请号:US12118100

    申请日:2008-05-09

    IPC分类号: H01L21/66 G01B11/14

    CPC分类号: H01L22/14

    摘要: An apparatus and a method for semiconductor wafer bonding provide in-situ and real time monitoring of semiconductor wafer bonding time. Deflection of the wafer edges during the last phase of the direct bonding process indicates the end of the bonding process. The apparatus utilizes a distance sensor to measure the deflection of the wafer edges and the bonding time is measured as the time between applying the force (bonding initiation) and completion of the bonding process. The bonding time is used as a real-time quality control parameter for the wafer bonding process.

    摘要翻译: 半导体晶片接合的装置和方法提供半导体晶片接合时间的原位和实时监测。 在直接接合过程的最后阶段期间,晶片边缘的偏转指示结合过程的结束。 该装置利用距离传感器来测量晶片边缘的偏转,并且结合时间被测量为施加力(接合起始)和结合过程完成之间的时间。 接合时间用作晶片接合工艺的实时质量控制参数。