摘要:
A debonder apparatus for debonding two via an adhesive layer temporary bonded wafers includes a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly, and an X-axis drive control. The top chuck assembly includes a heater and a wafer holder. The X-axis drive control drives horizontally the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. A wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer is placed upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly and is carried by the X-axis carriage drive to the process zone under the top chuck assembly and the unbonded surface of the carrier wafer is placed in contact with the top chuck assembly. The X-axis drive control initiates horizontal motion of the X-axis carriage drive along the X-axis while heat is applied to the carrier wafer via the heater and while the carrier wafer is held by the top chuck assembly via the wafer holder and thereby causes the device wafer to separate and slide away from the carrier wafer.
摘要:
A method for debonding two temporary bonded wafers, includes providing a debonder comprising a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly and an X-axis drive control configured to drive horizontally the X-axis carriage drive and the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. Next, loading a wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly. Next, driving the X-axis carriage drive and the bottom chuck assembly to the process zone under the top chuck assembly. Next, placing the unbonded surface of the carrier wafer in contact with the top chuck assembly and holding the carrier wafer by the top chuck assembly. Next, initiating horizontal motion of the X-axis carriage drive while heat is applied to the carrier wafer and while the carrier wafer is held by the top chuck assembly.
摘要:
An apparatus and a method for semiconductor wafer bonding provide in-situ and real time monitoring of semiconductor wafer bonding time. Deflection of the wafer edges during the last phase of the direct bonding process indicates the end of the bonding process. The apparatus utilizes a distance sensor to measure the deflection of the wafer edges and the bonding time is measured as the time between applying the force (bonding initiation) and completion of the bonding process. The bonding time is used as a real-time quality control parameter for the wafer bonding process.
摘要:
An apparatus for debonding two temporary bonded wafers includes a chuck assembly, a flex plate assembly and a contact roller. The chuck assembly includes a chuck and a first wafer holder to hold wafers in contact with the top surface of the chuck. The flex plate assembly includes a flex plate and a second wafer holder configured to hold wafers in contact with a first surface of the flex plate. The flex plate comprises a first edge arranged adjacent to a first edge of the chuck and connected to a hinge. The flex plate is configured to swing around the hinge and to be placed above the top surface of the chuck. The contact roller is arranged adjacent to a second edge of the chuck, which is diametrically opposite to its first edge. A debond drive motor moves the contact roller vertical to the plane of the chuck top surface.
摘要:
A debonder apparatus for debonding two via an adhesive layer combined with a release layer temporary bonded wafers includes a chuck assembly, a flex plate assembly and a contact roller. The chuck assembly includes a chuck and a first wafer holder configured to hold wafers in contact with the top surface of the chuck. The flex plate assembly includes a flex plate and a second wafer holder configured to hold wafers in contact with a first surface of the flex plate. The flex plate comprises a first edge connected to a hinge and a second edge diametrically opposite to the first edge, and the flex plate's first edge is arranged adjacent to a first edge of the chuck and the flex plate is configured to swing around the hinge and to be placed above the top surface of the chuck. The contact roller is arranged adjacent to a second edge of the chuck, which is diametrically opposite to its first edge. A debond drive motor is configured to move the contact roller vertical to the plane of the chuck top surface. In operation, a wafer pair, comprising a carrier wafer stacked upon and being bonded to a device wafer via an adhesive layer and a release layer, is placed upon the chuck so that the ubonded surface of the device wafer is in contact with the chuck top surface. Next, the flex plate swings around the hinge and is placed above the bottom chuck so that its first surface is in contact with the unbonded surface of the carrier wafer. Next, the contact roller is driven upward until it contacts and pushes the second edge of the flex plate up while the carrier wafer is held by the flex plate and the device wafer is held by the chuck via the second and first wafer holders, respectively. The contact roller push flexes the second edge of the flex plate and causes delamination of the wafer pair along the release layer.
摘要:
A debonder apparatus for debonding two via an adhesive layer temporary bonded wafers includes a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly, and an X-axis drive control. The top chuck assembly includes a heater and a wafer holder. The X-axis drive control drives horizontally the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. A wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer is placed upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly and is carried by the X-axis carriage drive to the process zone under the top chuck assembly and the unbonded surface of the carrier wafer is placed in contact with the top chuck assembly. The X-axis drive control initiates horizontal motion of the X-axis carriage drive along the X-axis while heat is applied to the carrier wafer via the heater and while the carrier wafer is held by the top chuck assembly via the wafer holder and thereby causes the device wafer to separate and slide away from the carrier wafer.
摘要:
An improved apparatus for temporary wafer bonding includes a temporary bonder cluster and a debonder cluster. The temporary bonder cluster includes temporary bonder modules that perform electronic wafer bonding processes including adhesive layer bonding, combination of an adhesive layer with a release layer bonding and a combination of a UV-light curable adhesive layer with a laser absorbing release layer bonding. The debonder cluster includes a thermal slide debonder, a mechanical debonder and a radiation debonder.
摘要:
An improved apparatus for temporary wafer bonding includes a temporary bonder cluster and a debonder cluster. The temporary bonder cluster includes temporary bonder modules that perform electronic wafer bonding processes including adhesive layer bonding, combination of an adhesive layer with a release layer bonding and a combination of a UV-light curable adhesive layer with a laser absorbing release layer bonding. The debonder cluster includes a thermal slide debonder, a mechanical debonder and a radiation debonder.
摘要:
An apparatus and a method for semiconductor wafer bonding provide in-situ and real time monitoring of semiconductor wafer bonding time. Deflection of the wafer edges during the last phase of the direct bonding process indicates the end of the bonding process. The apparatus utilizes a distance sensor to measure the deflection of the wafer edges and the bonding time is measured as the time between applying the force (bonding initiation) and completion of the bonding process. The bonding time is used as a real-time quality control parameter for the wafer bonding process.