公开(公告)号：US20240387422A1

公开(公告)日：2024-11-21

申请号：US18637760

申请日：2024-04-17

Applicant: MEDIATEK INC.

Inventor： Cheng-Lin HUANG ,  Ting-Li YANG

IPC: H01L23/00

Abstract: A semiconductor structure is provided. The semiconductor structure includes an interconnection structure, a passivation layer and a dielectric capping layer. The interconnect structure has a conductive pad located at a top of the interconnection structure. The passivation layer is disposed on the interconnection structure. The passivation layer has a first opening to expose a portion of the conductive pad. The dielectric capping layer is conformally formed on the passivation layer and extends into the first opening. The dielectric capping layer has a second opening to expose the portion of the conductive pad.