公开(公告)号：US20250079360A1

公开(公告)日：2025-03-06

申请号：US18797902

申请日：2024-08-08

Applicant: MEDIATEK INC.

Inventor： Cheng Lin HUANG ,  Ting-Li YANG

IPC: H01L23/00 ,  H01L23/31

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes an interconnect structure, a passivation layer and a conductive bump structure. The interconnect structure includes a conductive pad located at a top of the interconnect structure. The passivation layer is disposed on the interconnect structure. The conductive bump structure is disposed on and embedded into the passivation layer and the conductive pad. In a first direction, a first interface between the passivation layer and the conductive pad is located beside and misaligned with a second interface between the conductive bump structure and the conductive pad.

公开(公告)号：US20240387422A1

公开(公告)日：2024-11-21

申请号：US18637760

申请日：2024-04-17

Applicant: MEDIATEK INC.

Inventor： Cheng-Lin HUANG ,  Ting-Li YANG

IPC: H01L23/00

Abstract: A semiconductor structure is provided. The semiconductor structure includes an interconnection structure, a passivation layer and a dielectric capping layer. The interconnect structure has a conductive pad located at a top of the interconnection structure. The passivation layer is disposed on the interconnection structure. The passivation layer has a first opening to expose a portion of the conductive pad. The dielectric capping layer is conformally formed on the passivation layer and extends into the first opening. The dielectric capping layer has a second opening to expose the portion of the conductive pad.