公开(公告)号：US20240243120A1

公开(公告)日：2024-07-18

申请号：US18544764

申请日：2023-12-19

Applicant: MEDIATEK INC.

Inventor： Han-Sheng HUANG ,  Bo-Shih HUANG

IPC: H01L27/02

CPC classification number: H01L27/027

Abstract: Electrostatic discharge (ESD) protection structures are provided. A first N-type well region is formed over a P-type semiconductor substrate. First P-type well region and second N-type well region are formed over the first N-type well region. A plurality of first device areas are formed over the first P-type well region. Each first device area includes a plurality of P-type fins extending in a first direction. The P-type fins are divided into a plurality of first groups in each of the first device areas. A second device area is formed over the first P-type well region, and includes a plurality of N-type fins extending in the first direction and surrounded by the first device areas. When an ESD event is present, an ESD current flows sequentially through the P-type fins, the first P-type well region and the N-type fins.