公开(公告)号：US20240038755A1

公开(公告)日：2024-02-01

申请号：US18344126

申请日：2023-06-29

Applicant: MEDIATEK INC.

Inventor： Chia-Hsin HU ,  Wei-Chieh TSENG ,  Zheng ZENG

IPC: H01L27/02 ,  H01L29/78 ,  H01L27/092

CPC classification number: H01L27/0207 ,  H01L29/785 ,  H01L27/0924 ,  H01L27/0922 ,  H01L29/66545

Abstract: A semiconductor structure is provided. The semiconductor structure includes a logic cell. The logic cell includes a first transistor and a second transistor. The first transistor includes a first gate structure extending in a first direction and overlapping a first semiconductor fin. The second transistor includes a second gate structure extending in the first direction and overlapping the first semiconductor fin and a second semiconductor fin. The first and second semiconductor fins extend in a second direction that is perpendicular to the first direction. The first and second transistors share a source/drain region, and one end of the first gate structure is formed between the first and second semiconductor fins.