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公开(公告)号：US20230121979A1
公开(公告)日：2023-04-20
申请号：US17914649
申请日：2021-03-11
发明人： Damien LACHENAL
IPC分类号： H01L31/05 , H01L31/077 , H01L31/18 , H01L31/20 , H01L23/544
摘要： Disclosed is interdigitated back contact (IBC) photovoltaic devices and modules that are based on a silicon structured device which includes: a silicon-based substrate, an intrinsic amorphous silicon layer a-Si:H(i) situated on substrate a first patterned silicon layer, and a second patterned nano-crystalline silicon layer on the first patterned silicon layer. The second patterned layer is of the same type of doping than the first patterned silicon layer The first patterned layer and the second patterned layer form photovoltaic structures, of which at least one constitutes a fiducial mark having, in a predetermined wavelength range, a different optical reflectivity, than the reflectivity of the intrinsic amorphous silicon (a-Si:H(i)) layer portions interstices between the photovoltaic structures. Also disclosed are a photovoltaic device, photovoltaic modules and a method of fabrication of the photovoltaic device.
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公开(公告)号：US20220246780A1
公开(公告)日：2022-08-04
申请号：US17623811
申请日：2020-07-03
发明人： Benjamin STRAHM , Damien LACHENAL , Derk BÄTZNER
IPC分类号： H01L31/077 , H01L31/20
摘要： Disclosed is an interdigitated back contact photovoltaic device that includes a first patterned silicon layer situated on an intrinsic layer, and having the same type of doping as the one of the substrate. First charge collection portions are deposited on predetermined areas of the intrinsic layer, and include each an amorphous layer portion situated between the predetermined areas and the at least partially nano-crystalline layer portions. The amorphous layer portions have a larger width than the width of the nano-crystalline layer portions. On top if the first patterned silicon layer, a second nano-crystalline silicon layer is deposited that has a doping of a second type being the other of the p-type doping or the n-type doping with respect to the doping-type of the first patterned silicon layer.
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公开(公告)号：US20240014339A1
公开(公告)日：2024-01-11
申请号：US18247801
申请日：2021-10-15
发明人： Damien LACHENAL , Pierre PAPET , Till KÖSSLER
IPC分类号： H01L31/05
CPC分类号： H01L31/0516 , H01L31/072
摘要： Disclosed is a method to fabricate an interdigitated back contact photovoltaic device including: providing a substrate of a first-type doping being an n-type or a p-type doping; realizing on a back side a semiconducting doped structure including individual doped layers portions of the first type doping and a semiconducting doped structure of a second type; realizing a conductive layer on top of the semiconducting structure; realizing a patterned isolation resist layer having contact apertures and isolation apertures onto the conductive layer; further applying conductive pads to the contact apertures; and etching the conductive layer up to the second-type doped layer to realize trenches to electrically separate first type charge collecting structures from second type charge collecting structures. Also disclosed is an interdigitated back contact photovoltaic device as manufactured according to the disclosed method of fabrication, and a photovoltaic system including at least two interdigitated back contact photovoltaic devices.
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