MULTI-JUNCTION SOLAR CELL
    1.
    发明公开

    公开(公告)号:US20240258449A1

    公开(公告)日:2024-08-01

    申请号:US18560876

    申请日:2022-05-17

    摘要: The invention relates to a multi-junction solar cell comprising at least two sub-cells based on silicon and at least one material other than silicon, wherein a first sub-cell is designed to use photons in a spectral region of a shorter wavelength than a spectral region of a longer wavelength of a second sub-cell, the second sub-cell being based on silicon and the first sub-cell being based on a material which has a larger band gap than silicon, wherein the first sub-cell and the second sub-cell are designed as a monolithic unit consisting of a layer stack, and wherein the first sub-cell and the second sub-cell are electrically connected to one another in series by means of a tunnel diode, such that the tandem solar cell is equipped with two terminals, wherein the tunnel diode has a tunnel diode n layer and a tunnel diode p layer. The problem addressed is that of proposing a multi-junction solar cell of simple construction. The problem is solved by multi-junction solar cells in which the tunnel diode n layer and/or the tunnel diode p layer is/are silicon-based layer(s).

    PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20230121979A1

    公开(公告)日:2023-04-20

    申请号:US17914649

    申请日:2021-03-11

    发明人: Damien LACHENAL

    摘要: Disclosed is interdigitated back contact (IBC) photovoltaic devices and modules that are based on a silicon structured device which includes: a silicon-based substrate, an intrinsic amorphous silicon layer a-Si:H(i) situated on substrate a first patterned silicon layer, and a second patterned nano-crystalline silicon layer on the first patterned silicon layer. The second patterned layer is of the same type of doping than the first patterned silicon layer The first patterned layer and the second patterned layer form photovoltaic structures, of which at least one constitutes a fiducial mark having, in a predetermined wavelength range, a different optical reflectivity, than the reflectivity of the intrinsic amorphous silicon (a-Si:H(i)) layer portions interstices between the photovoltaic structures. Also disclosed are a photovoltaic device, photovoltaic modules and a method of fabrication of the photovoltaic device.

    Plasma treatment device with two microwave plasma sources coupled to one another, and method for operating a plasma treatment device of this kind

    公开(公告)号:US10685813B2

    公开(公告)日:2020-06-16

    申请号:US16341455

    申请日:2017-10-10

    发明人: Joachim Mai

    IPC分类号: H01J37/32 H05H1/46

    摘要: The invention relates to a plasma treatment device with a treatment chamber, at least one pair of microwave plasma sources and at least one voltage source. Each pair of microwave plasma sources consists of a first microwave plasma source and a second microwave plasma source, wherein the first and the second microwave plasma source each have a plasma source wall and, within this, a microwave coupling-in device and a plasma electrode. The first and the second microwave plasma source are arranged within the treatment chamber on the same side of one or more substrates to be processed and adjacently to one another. The plasma electrodes of the first microwave plasma source and the second microwave plasma source are electrically insulated from one another and electrically conductively connected to the at least one voltage source. Here, the at least one voltage source is suitable for supplying the plasma electrodes of the first and the second microwave plasma source with different potentials. The invention also relates to a method for operating a plasma treatment device of this kind.

    PROCESS MODULE
    7.
    发明申请
    PROCESS MODULE 审中-公开

    公开(公告)号:US20190390344A1

    公开(公告)日:2019-12-26

    申请号:US16432548

    申请日:2019-06-05

    摘要: The present invention relates to a process module comprising at least one evacuable process chamber located in the process module and at least one support device being horizontally moveable through the process module in at least one substrate transport direction for accommodating respectively at least one flat substrate which is to be processed in the process chamber. It is the object of the present invention to provide a process module of the above-mentioned type, which allows a consistent and high-quality processing of all substrates at high production speed and at the lowest device costs possible. Said object is solved by a process module of the above mentioned type in which the at least one process chamber is physically closeable with respect to the process module by means of the support device, the position of which is changeable in at least one closing direction transverse to the substrate transport direction, wherein the at least one support device forms a bottom of the at least one process chamber.

    METHOD OF PRODUCTION OF SILICON HETEROJUNCTION SOLAR CELLS WITH STABILIZATION STEP AND PRODUCTION LINE SECTION FOR THE STABILIZING STEP

    公开(公告)号:US20220149225A1

    公开(公告)日:2022-05-12

    申请号:US17438685

    申请日:2020-04-29

    发明人: Steffen FRIGGE

    摘要: The present invention relates to a method of production of silicon heterojunction solar cells having at least one stabilization step, wherein the stabilization step is performed after amorphous silicon layers, and preferably also transparent layers or even metallic contact materials, have already been applied beforehand to crystalline silicon solar wafers. The problem addressed by the invention consists in finding an efficient stabilization step which permits high solar cell efficiencies. The problem is solved by a method of production of silicon heterojunction solar cells in which the stabilization step comprises heating the solar cell to temperatures above 200° C. and illumination from a light source, wherein the light source emits light in a wavelength range

    SUBSTRATE TREATMENT APPARATUS
    10.
    发明申请

    公开(公告)号:US20190169744A1

    公开(公告)日:2019-06-06

    申请号:US15754943

    申请日:2016-08-02

    摘要: A substrate treatment apparatus for treating substrates has a plate-shaped substrate carrier and at least one plate-shaped tempering device, which is arranged parallel to the substrate carrier. The substrate carrier has a substrate carrier front side for supporting at least one laminar substrate and a substrate carrier back side, which faces the tempering device. The object of the present invention is to provide a substrate treatment apparatus which enables a heat distribution as evenly as possible in the substrate carrier. For that purpose, there is provided at least one spacer element for forming a distance between the substrate carrier and the tempering device at the substrate carrier back side and/or a surface of the tempering device facing the substrate carrier.