公开(公告)号：US10453673B2

公开(公告)日：2019-10-22

申请号：US15867993

申请日：2018-01-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Brian Dolan ,  Robert J. Hanson ,  Chan Lim

IPC: H01L21/02 ,  H01L21/66

Abstract: Methods of removing metal from a portion of a substrate include exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent if the metal remaining on the portion of the substrate is deemed to be greater than the particular level.

公开(公告)号：US20180138033A1

公开(公告)日：2018-05-17

申请号：US15867993

申请日：2018-01-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Brian Dolan ,  Robert J. Hanson ,  Chan Lim

IPC: H01L21/02 ,  H01L21/66

CPC classification number: H01L21/02071 ,  H01L22/12 ,  H01L22/20

Abstract: Methods of removing metal from a portion of a substrate include exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent if the metal remaining on the portion of the substrate is deemed to be greater than the particular level.

公开(公告)号：US09887077B2

公开(公告)日：2018-02-06

申请号：US15070456

申请日：2016-03-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Brian Dolan ,  Robert J. Hanson ,  Chan Lim

IPC: B08B3/00 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L21/02071 ,  H01L22/12 ,  H01L22/20

Abstract: Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and if the metal remaining on the portion of the substrate is deemed to be greater than the particular level, exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

公开(公告)号：US20160196967A1

公开(公告)日：2016-07-07

申请号：US15070456

申请日：2016-03-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Brian Dolan ,  Robert J. Hanson ,  Chan Lim

IPC: H01L21/02 ,  H01L21/66

CPC classification number: H01L21/02071 ,  H01L22/12 ,  H01L22/20

Abstract: Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and if the metal remaining on the portion of the substrate is deemed to be greater than the particular level, exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

Abstract translation: 从基板的一部分去除金属的方法在集成电路制造中是有用的。 方法包括将衬底暴露于包含至少一种氧化剂和至少一种还原剂的氧化环境中，确定残留在衬底部分上的金属是否小于或等于特定水平，并且如果残留在该部分上的金属 被认为大于特定水平，将底物暴露于包含至少一种还原剂和至少一种氧化剂的还原环境中。