公开(公告)号：US20240029801A1

公开(公告)日：2024-01-25

申请号：US18211802

申请日：2023-06-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Dung Viet Nguyen ,  Patrick R. Khayat ,  Zhengang Chen ,  Shantilal Rayshi Doru ,  Hope Abigail Henry

IPC: G11C16/34 ,  G11C16/26

CPC classification number: G11C16/3404 ,  G11C16/26

Abstract: Described are systems and methods for memory read calibration based on memory device-originated metrics characterizing voltage distributions. An example memory device includes: a memory array having a plurality of memory cells and a controller coupled to the memory array. The controller is to perform operations including: receiving a first metric characterizing threshold voltage distributions of a subset of the plurality of memory cells; determining a first read voltage adjustment; receiving a second metric characterizing the threshold voltage distributions; determining a second read voltage adjustment; and applying the second read voltage adjustment for reading the subset of the plurality of memory cells.