公开(公告)号：US20240355366A1

公开(公告)日：2024-10-24

申请号：US18633346

申请日：2024-04-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Kishan Reddy Gonapati ,  Dong Pan ,  Ming Hai Li

IPC: G11C7/04 ,  G11C7/08 ,  G11C7/22

CPC classification number: G11C7/04 ,  G11C7/08 ,  G11C7/222

Abstract: A semiconductor device may include a voltage threshold compensation (VTC) sense amplifier configured to amplify signals read from memory cells to recognizable logic levels. The VTC sense amplifier may equalize threshold voltages of transistors at the sense amplifier during a compensation phase before sensing a memory cell. The compensation phase may be delayed or extended in duration by an amount based on a combination of currents that are proportional to absolute temperature (PTAT) and zero to absolute temperature (ZTAT), or PTAT and complementary to absolute temperature (CTAT). Different combinations of PTAT and ZTAT currents, or PTAT and CTAT currents, may correspond to different temperature slopes. The semiconductor device may choose from the different temperature slopes to achieve different delays for given temperatures.