公开(公告)号：US09093641B2

公开(公告)日：2015-07-28

申请号：US13761609

申请日：2013-02-07

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Jerome Imonigie

IPC: H01L21/311 ,  H01L45/00

CPC classification number: H01L45/1675 ,  H01L45/06 ,  H01L45/144

Abstract: Some embodiments include methods of forming memory cells. Chalcogenide is formed over a plurality of bottom electrodes, and top electrode material is formed over the chalcogenide. Sacrificial material is formed over the top electrode material. A plurality of memory cell structures is formed by etching through the sacrificial material, top electrode material and chalcogenide. Each of the memory cell structures has a cap of the sacrificial material thereover. The etching forms polymeric residue over the sacrificial material caps, and damages chalcogenide along sidewalls of the structures. The sacrificial material is removed with an HF-containing solution, and such removes the polymeric residue off of the memory cell structures. After the sacrificial material is removed, the sidewalls of the structures are treated with one or both of H2O2 and HNO3 to remove damaged chalcogenide from the sidewalls of the memory cell structures.

Abstract translation: 一些实施例包括形成存储器单元的方法。 硫族化物形成在多个底部电极上，顶部电极材料形成在硫族化物上。 牺牲材料形成在顶部电极材料上。 通过蚀刻牺牲材料，顶电极材料和硫族化物来形成多个存储单元结构。 每个存储单元结构都具有其上的牺牲材料的盖。 蚀刻在牺牲材料盖上形成聚合物残余物，并且沿着结构的侧壁损坏硫属元素。 牺牲材料用含HF的溶液除去，这样将聚合物残留物从记忆电池结构中除去。 在去除牺牲材料之后，用H 2 O 2和HNO 3中的一种或两种处理结构的侧壁以从存储单元结构的侧壁去除损坏的硫族化物。

公开(公告)号：US20130149834A1

公开(公告)日：2013-06-13

申请号：US13761609

申请日：2013-02-07

Applicant: MICRON TECHNOLOGY INC.

Inventor： Jun Liu ,  Jerome Imonigie

IPC: H01L45/00

CPC classification number: H01L45/1675 ,  H01L45/06 ,  H01L45/144

Abstract: Some embodiments include methods of forming memory cells. Chalcogenide is formed over a plurality of bottom electrodes, and top electrode material is formed over the chalcogenide. Sacrificial material is formed over the top electrode material. A plurality of memory cell structures is formed by etching through the sacrificial material, top electrode material and chalcogenide. Each of the memory cell structures has a cap of the sacrificial material thereover. The etching forms polymeric residue over the sacrificial material caps, and damages chalcogenide along sidewalls of the structures. The sacrificial material is removed with an HF-containing solution, and such removes the polymeric residue off of the memory cell structures. After the sacrificial material is removed, the sidewalls of the structures are treated with one or both of H2O2 and HNO3 to remove damaged chalcogenide from the sidewalls of the memory cell structures.

Abstract translation: 一些实施例包括形成存储器单元的方法。 硫族化物形成在多个底部电极上，顶部电极材料形成在硫族化物上。 牺牲材料形成在顶部电极材料上。 通过蚀刻牺牲材料，顶电极材料和硫族化物来形成多个存储单元结构。 每个存储单元结构都具有其上的牺牲材料的盖。 蚀刻在牺牲材料盖上形成聚合物残余物，并且沿着结构的侧壁损坏硫属元素。 牺牲材料用含HF的溶液除去，这样将聚合物残留物从记忆电池结构中除去。 在去除牺牲材料之后，用H 2 O 2和HNO 3中的一种或两种处理结构的侧壁以从存储单元结构的侧壁去除损坏的硫族化物。