公开(公告)号：US20240003040A1

公开(公告)日：2024-01-04

申请号：US18037157

申请日：2021-10-25

申请人： MITOMO SEMICON ENGINEERING CO., LTD.

发明人： YUJI UCHIUMI

IPC分类号： C25D17/02 ,  C25D17/10 ,  C25D17/00 ,  C25D21/14

CPC分类号： C25D17/02 ,  C25D17/10 ,  C25D17/002 ,  C25D21/14

摘要： Provided is a plating process that enables merits of an insoluble anode to be sufficiently enjoyed in a jet type plating equipment. Also provided is a plating equipment having a plating tank including an opening part; a solution supply piping; an insoluble anode; and an diaphragm, an diaphragm outer peripheral end being fixed to a plating tank inner wall, a through-hole being provided in an diaphragm center, a hole peripheral end of the through-hole being fixed to the solution supply piping, the diaphragm being arranged so as to be inclined upward in an outer circumferential direction from the solution supply piping. A silicon ring is firmly fixed to each of the outer peripheral end of the diaphragm and a hole edge of the through-hole of the diaphragm. The solution supply piping supplies the plating solution to an upper catholyte chamber in the plating tank, the upper catholyte chamber being formed by the diaphragm and the placed object to be plated. An annular flow passage including a solution ejection hole in an upper part thereof is provided in an outer circumference of the solution supply piping, and a lower anolyte chamber solution is supplied from the solution ejection hole to a lower anolyte chamber in the plating tank, the lower anolyte chamber being formed below the diaphragm, whereby a flow that moves from around the through-hole of the diaphragm toward the outer circumferential direction of the diaphragm is formed in the lower piping isolation chamber solution.