公开(公告)号：US12054846B2

公开(公告)日：2024-08-06

申请号：US17943376

申请日：2022-09-13

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Taiseung Cha ,  Taewan Kang ,  Donghwan Park ,  Sunggon Kim ,  Sungkeun Lee

IPC分类号： C25D5/18 ,  C25D7/12 ,  C25D17/00 ,  C25D17/08 ,  C25D21/08 ,  C25D21/12 ,  C25D21/18

CPC分类号： C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/08 ,  C25D21/08 ,  C25D21/12 ,  C25D21/18

摘要： An electroplating apparatus includes: an electroplating bath including an anode region, in which an anode electrode is arranged, a cathode region and a membrane; a head unit including a contact ring holding a wafer and configured so that a first cathode potential is applied to the contact ring during an electroplating process; a reverse potential electrode arranged adjacent to the membrane and configured so that a second cathode potential is applied to the reverse potential electrode during the electroplating process, and a reverse cathode potential is applied to the reverse potential electrode during a rinsing process; and a power supply unit configured to apply the first cathode potential and the second cathode potential during the electroplating process, and further configured to apply the reverse cathode potential and a reverse anode potential to the anode electrode during the rinsing process.

公开(公告)号：US20240167187A1

公开(公告)日：2024-05-23

申请号：US17991349

申请日：2022-11-21

申请人： Unison Industries, LLC

发明人： Pei-hsin Kuo ,  Edward James Nieters

IPC分类号： C25D21/12 ,  C25D17/00 ,  C25D17/10

CPC分类号： C25D21/12 ,  C25D17/002 ,  C25D17/10

摘要： A system and method of inspecting a thickness of metal on an electroformed component. The system capable of scanning the electroformed component with a sensor. The system including a computer for generating a scan data set indicative of the thickness of the metal on the electroformed component. A controller for instructing an anode to deposit additional metal on the electroformed component where the thickness is less than a target thickness.

公开(公告)号：US11905613B2

公开(公告)日：2024-02-20

申请号：US16808948

申请日：2020-03-04

申请人： COVENTYA S.P.A.

发明人： Diego Dal Zilio ,  Gianluigi Schiavon

IPC分类号： C25D3/06 ,  C25D3/10 ,  C25D3/56 ,  C25D5/00 ,  C25D5/18 ,  C25D17/00

CPC分类号： C25D3/06 ,  C25D3/10 ,  C25D17/002

摘要： The present invention refers to an electroplating bath for depositing chromium which comprises at least one trivalent chromium salt, at least one complexing agent, at least one halogen salt and optionally further additives. Moreover, the invention refers to a process for depositing chromium on a substrate using the mentioned electroplating bath.

公开(公告)号：US20240003040A1

公开(公告)日：2024-01-04

申请号：US18037157

申请日：2021-10-25

申请人： MITOMO SEMICON ENGINEERING CO., LTD.

发明人： YUJI UCHIUMI

IPC分类号： C25D17/02 ,  C25D17/10 ,  C25D17/00 ,  C25D21/14

CPC分类号： C25D17/02 ,  C25D17/10 ,  C25D17/002 ,  C25D21/14

摘要： Provided is a plating process that enables merits of an insoluble anode to be sufficiently enjoyed in a jet type plating equipment. Also provided is a plating equipment having a plating tank including an opening part; a solution supply piping; an insoluble anode; and an diaphragm, an diaphragm outer peripheral end being fixed to a plating tank inner wall, a through-hole being provided in an diaphragm center, a hole peripheral end of the through-hole being fixed to the solution supply piping, the diaphragm being arranged so as to be inclined upward in an outer circumferential direction from the solution supply piping. A silicon ring is firmly fixed to each of the outer peripheral end of the diaphragm and a hole edge of the through-hole of the diaphragm. The solution supply piping supplies the plating solution to an upper catholyte chamber in the plating tank, the upper catholyte chamber being formed by the diaphragm and the placed object to be plated. An annular flow passage including a solution ejection hole in an upper part thereof is provided in an outer circumference of the solution supply piping, and a lower anolyte chamber solution is supplied from the solution ejection hole to a lower anolyte chamber in the plating tank, the lower anolyte chamber being formed below the diaphragm, whereby a flow that moves from around the through-hole of the diaphragm toward the outer circumferential direction of the diaphragm is formed in the lower piping isolation chamber solution.

公开(公告)号：US11859300B2

公开(公告)日：2024-01-02

申请号：US17809124

申请日：2022-06-27

申请人： Lam Research Corporation

发明人： Zhian He ,  Shantinath Ghongadi ,  Quan Ma ,  Hyungjun Hur ,  Cian Sweeney ,  Quang Nguyen ,  Rezaul Karim ,  Jingbin Feng

IPC分类号： C25D17/00 ,  C25D17/10 ,  C25D3/38 ,  C25D21/14 ,  C25D21/18 ,  H01L21/288

CPC分类号： C25D17/001 ,  C25D3/38 ,  C25D17/002 ,  C25D17/10 ,  C25D21/14 ,  C25D21/18 ,  H01L21/2885

摘要： Methods and electroplating systems for controlling plating electrolyte concentration on an electrochemical plating apparatus for substrates are disclosed. A method involves: (a) providing an electroplating solution to an electroplating system; (b) electroplating the metal onto the substrate while the substrate is held in a cathode chamber of an electroplating cell of electroplating system; (c) supplying the make-up solution to the electroplating system via a make-up solution inlet; and (d) supplying the secondary electroplating solution to the electroplating system via a secondary electroplating solution inlet. The secondary electroplating solution includes some or all components of the electroplating solution. At least one component of the secondary electroplating solution has a concentration that significantly deviates from its target concentration.

公开(公告)号：US11814743B2

公开(公告)日：2023-11-14

申请号：US16901716

申请日：2020-06-15

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Yung-Hsiang Chen ,  Hung-San Lu ,  Ting-Ying Wu ,  Chuang Chihchous ,  Yu-Lung Yeh

IPC分类号： C25D17/06 ,  C25D7/12 ,  C25D17/00

CPC分类号： C25D17/06 ,  C25D7/12 ,  C25D17/001 ,  C25D17/002

摘要： A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

公开(公告)号：US11781235B2

公开(公告)日：2023-10-10

申请号：US17419036

申请日：2018-12-28

申请人： ACM Research (Shanghai) Inc.

发明人： Yinuo Jin ,  Hongchao Yang ,  Jian Wang ,  Hui Wang

IPC分类号： C25D5/18 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12

CPC分类号： C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12

摘要： A plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode (3001); step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P11 and continue with a period T11 (3002); step 3: when the period T11 ends, adjusting the first plating power supply applied on the first anode to output a power value P12 and continue with a period T12, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P21 and continue with a period T21 (3003); and step 4: when the period T21 ends, adjusting the second plating power supply applied on the second anode to output a power value P22 and continue with a period T22; wherein step 2 to step 4 are performed periodically.

公开(公告)号：US20230313408A1

公开(公告)日：2023-10-05

申请号：US18018664

申请日：2021-08-13

申请人： LAM RESEARCH CORPORATION

发明人： Liu YANG ,  Quan MA ,  Zhian HE ,  Shantinath GHONGADI

IPC分类号： C25D21/12 ,  C25D17/00 ,  C25D5/18 ,  C25F1/00 ,  C25F7/00 ,  C25D21/08

CPC分类号： C25D21/12 ,  C25D17/005 ,  C25D17/002 ,  C25D5/18 ,  C25F1/00 ,  C25F7/00 ,  C25D21/08

摘要： An electrochemical deposition system configured for electrochemical plating of a substrate includes a chamber, an electrode, a plating cup and a controller. The chamber holds a plating bath. The electrode is disposed in the plating bath. The plating cup includes a contact ring. The contact ring includes contacts. The contacts are immersed in the plating bath. The controller is configured to apply a voltage signal across the contact ring and the electrode to remove residual from the contacts. The voltage signal includes a plating-de-plating waveform. The plating-de-plating waveform includes multiple cycles. Each of the cycles includes a pair of pulses with different polarity.

公开(公告)号：US10077505B2

公开(公告)日：2018-09-18

申请号：US14979914

申请日：2015-12-28

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Motoki Hiraoka ,  Hiroshi Yanagimoto ,  Yuki Sato

IPC分类号： C25D17/00 ,  C25D3/12 ,  C25D3/46 ,  C25D3/48 ,  C25D5/02 ,  H05K3/24 ,  C25D3/00 ,  C25D17/14 ,  C25D3/38

CPC分类号： C25D17/002 ,  C25D3/00 ,  C25D3/12 ,  C25D3/38 ,  C25D3/46 ,  C25D3/48 ,  C25D5/02 ,  C25D17/005 ,  C25D17/14 ,  H05K3/242 ,  H05K2203/0723

摘要： A metal-film forming apparatus includes: an anode; a resin substrate having a surface on which a conductor pattern layer that serves as a cathode is formed; a solid electrolyte membrane that contains metal ions and is between the anode and the resin substrate, the solid electrolyte membrane contacting a surface of the conductor pattern layer when a metal film is formed; a power supply; and a conductive member that is arranged contacting the conductor pattern layer when the metal film is formed, such that a negative electrode of the power supply is electrically connected to the conductor pattern layer, the conductive member being detachable from the conductor pattern layer, wherein the metal ions are reduced to deposit metal that forms the metal film on the surface of the conductor pattern layer when the voltage is applied.

公开(公告)号：US20180105949A1

公开(公告)日：2018-04-19

申请号：US15799903

申请日：2017-10-31

申请人： Novellus Systems, Inc.

发明人： Steven T. Mayer ,  Bryan L. Buckalew ,  Haiying Fu ,  Thomas Ponnuswamy ,  Hilton Diaz Camilo ,  Robert Rash ,  David W. Porter

IPC分类号： C25D21/12 ,  C25D17/00 ,  C25D7/12 ,  C25D5/08

CPC分类号： C25D21/12 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D17/002

摘要： Methods and apparatus for electroplating material onto a substrate are provided. In many cases the material is metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a porous ionically resistive plate positioned near the substrate, the plate having a plurality of interconnecting 3D channels and creating a cross flow manifold defined on the bottom by the plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through channels in the plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.