公开(公告)号：US20200007124A1

公开(公告)日：2020-01-02

申请号：US16490233

申请日：2018-02-07

申请人： MITSUBISHI HEAVY INDUSTRIES, LTD. ,  JAPAN AEROSPACE EXPLORATION AGENCY

发明人： Daisuke MATSUURA ,  Takanori NARITA ,  Masahiro KATO ,  Daisuke KOBAYASHI ,  Kazuyuki HIROSE ,  Osamu KAWASAKI ,  Yuya KAKEHASHI ,  Taichi ITO

IPC分类号： H03K17/687 ,  H01L27/092 ,  H01L21/8238

摘要： An operation adjustment method of an SOI device comprises steps of: (a) obtaining a drain current-substrate bias voltage characteristic of an NMOS transistor for a source-gate voltage of 0V; (b) obtaining a lowest substrate bias voltage which turns on the NMOS transistor from the drain current-substrate bias voltage characteristic; (c) determining an upper limit of a substrate bias voltage of a PMOS transistor as a voltage obtained by subtracting a built-in potential of a pn junction from the lowest substrate bias voltage; and (d) determining the substrate bias voltage of the PMOS transistor as a positive voltage lower than the upper limit. Reduction in the power consumption and maintenance of the radiation tolerance are both achieved for the SOI device.