公开(公告)号：US20090068433A1

公开(公告)日：2009-03-12

申请号：US12204240

申请日：2008-09-04

申请人： MUHAMMAD M. RASHEED

发明人： MUHAMMAD M. RASHEED

IPC分类号： B32B9/00

CPC分类号： C04B35/581 ,  C04B35/08 ,  C04B2235/3205 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/40 ,  C04B2235/80 ,  C04B2235/94 ,  C04B2235/95 ,  C04B2235/9607 ,  C04B2235/963 ,  Y10T428/265

摘要： Embodiments of the invention provide a method and apparatus for protecting a susceptor during a cleaning operation by loading a ceramic cover substrate containing either aluminum nitride or beryllium oxide onto the susceptor before introducing the cleaning agent into the chamber. In one embodiment, an aluminum nitride ceramic cover substrate is provided which includes an aluminum nitride ceramic wafer having a thermal conductivity of greater than 160 W/m-K, a circular-shaped geometry having a diameter within a range from about 11 inches to about 13 inches, a thickness within a range from about 0.030 inches to about 0.060 inches, and a flatness of about 0.010 inches or less. The thermal conductivity may be about 180 W/m-K, about 190 W/m-K, or greater. The thickness may be within a range from about 0.035 inches to about 0.050 inches, and the flatness may be about 0.008 inches, about 0.006 inches, or less.

摘要翻译： 本发明的实施例提供了一种用于在清洁操作期间通过将包含氮化铝或氧化铍的陶瓷覆盖基板载入到基座上来保护基座的方法和装置，然后将清洁剂引入室中。 在一个实施例中，提供了一种氮化铝陶瓷覆盖衬底，其包括导热率大于160W / mK的氮化铝陶瓷晶片，直径在约11英寸至约13英寸的范围内的圆形几何形状 ，在约0.030英寸至约0.060英寸的范围内的厚度，以及约0.010英寸或更小的平坦度。 热导率可以为约180W / m-K，约190W / m-K或更大。 厚度可以在约0.035英寸至约0.050英寸的范围内，并且平坦度可以为约0.008英寸，约0.006英寸或更小。

公开(公告)号：US20090266299A1

公开(公告)日：2009-10-29

申请号：US12109187

申请日：2008-04-24

申请人： MUHAMMAD M. RASHEED ,  TERUKI IWASHITA ,  HIROSHI OTAKE ,  YUKI KOGA ,  KAZUTOSHI MAEHARA ,  XINGLONG CHEN ,  SUDHIR GONDHALEKAR ,  DMITRY LUBOMIRSKY

发明人： MUHAMMAD M. RASHEED ,  TERUKI IWASHITA ,  HIROSHI OTAKE ,  YUKI KOGA ,  KAZUTOSHI MAEHARA ,  XINGLONG CHEN ,  SUDHIR GONDHALEKAR ,  DMITRY LUBOMIRSKY

IPC分类号： C23C16/448

CPC分类号： C23C16/4585 ,  C23C16/4581 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/68735

摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.

摘要翻译： 本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。 在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。 在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在 从内缘朝向外缘的径向向外方向。