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公开(公告)号：US20250151636A1
公开(公告)日：2025-05-08
申请号：US18500806
申请日：2023-11-02
Applicant: Macronix International Co., Ltd.
Inventor： Huai-Yu Cheng , Alexander R. Grun
Abstract: Methods, devices, apparatus, and systems for managing phase change materials for memory devices are provided. In one aspect, an integrated circuit (e.g., a memory element) includes: a first electrode, a second electrode, and a body of a phase change material coupled between the first electrode and the second electrode. The phase change material includes SixSbyTez, where x, y, z represent respective atomic ratios for compositions Si, Sb, Te. A bulk stoichiometry of the body of the phase change material includes a Si atomic concentration within a range from about 7% to about 12%.
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