公开(公告)号：US10541271B2

公开(公告)日：2020-01-21

申请号：US15787274

申请日：2017-10-18

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  Hsiang-Lan Lung ,  I-Ting Kuo

IPC: H01L27/24 ,  H01L45/00

Abstract: A voltage sensitive switching device is described having a superlattice-like cell structure comprising layers of ovonic materials, such as chalcogenide alloys. Memory cells can include the switching device, such as can be utilized in a cross-point memory.

公开(公告)号：US20250151636A1

公开(公告)日：2025-05-08

申请号：US18500806

申请日：2023-11-02

Applicant: Macronix International Co., Ltd.

Inventor： Huai-Yu Cheng ,  Alexander R. Grun

IPC: H10N70/00 ,  C22C30/00 ,  H10B63/10 ,  H10N70/20

Abstract: Methods, devices, apparatus, and systems for managing phase change materials for memory devices are provided. In one aspect, an integrated circuit (e.g., a memory element) includes: a first electrode, a second electrode, and a body of a phase change material coupled between the first electrode and the second electrode. The phase change material includes SixSbyTez, where x, y, z represent respective atomic ratios for compositions Si, Sb, Te. A bulk stoichiometry of the body of the phase change material includes a Si atomic concentration within a range from about 7% to about 12%.

公开(公告)号：US11289540B2

公开(公告)日：2022-03-29

申请号：US17205767

申请日：2021-03-18

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L27/24

Abstract: An ovonic threshold switch includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.

公开(公告)号：US20210288251A1

公开(公告)日：2021-09-16

申请号：US16814372

申请日：2020-03-10

Applicant: International Business Machines Corporation ,  Macronix International Co., Ltd.

Inventor： Cheng-Wei Cheng ,  Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L45/00 ,  H01L27/24

Abstract: An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.

公开(公告)号：US11271155B2

公开(公告)日：2022-03-08

申请号：US16814372

申请日：2020-03-10

Applicant: International Business Machines Corporation ,  Macronix International Co., Ltd.

Inventor： Cheng-Wei Cheng ,  Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L45/00 ,  H01L27/24

Abstract: An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.

公开(公告)号：US09917252B2

公开(公告)日：2018-03-13

申请号：US14936318

申请日：2015-11-09

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  Hsiang-Lan Lung

IPC: H01L45/00 ,  C22C12/00 ,  C22C28/00 ,  C22C30/00 ,  H01B1/02 ,  H01L27/24

CPC classification number: H01L45/148 ,  C22C12/00 ,  C22C28/00 ,  C22C30/00 ,  H01B1/02 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/16 ,  H01L45/1625

Abstract: A Ga—Sb—Ge family of phase change memory materials is described, including GaxSbyGez, wherein a Ga atomic concentration x is within a range from 20% to 45%, a Sb atomic concentration y is within a range from 25% to 40% and a Ge atomic concentration z is within a range from 25% to 55%, is described wherein the material has a crystallization transition temperature Tx greater than 360° C. Adding impurities including one or more element selected from silicon Si, carbon C, oxygen O and nitrogen N, can also increase the crystallization transition temperature Tx to temperatures greater than 400° C., and also reduce reset current.

公开(公告)号：US08916414B2

公开(公告)日：2014-12-23

申请号：US14038459

申请日：2013-09-26

Applicant: Macronix International Co., Ltd.

Inventor： Huai-Yu Cheng ,  Hsiang-Lan Lung

IPC: H01L21/00 ,  H01L45/00

CPC classification number: H01L45/1641 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1683

Abstract: To form a memory cell with a phase change element, a hole is formed through an insulator to a bottom electrode, and a phase change material is deposited on the insulator surface covering the hole. A confining structure is formed over the phase change material so the phase change material expands into the hole when heated to melting to become electrically connected to the bottom electrode. A top electrode is formed over and electrically connects to the phase change material. The bottom electrode can include a main portion and an extension having a reduced lateral dimension. The confining structure can include capping material having a higher melting temperature than the phase change material, and sufficient tensile strength to ensure the phase change material moves into the hole when the phase change material melts and expands. The hole can be a J shaped hole.

Abstract translation: 为了形成具有相变元件的存储单元，通过绝缘体到底部电极形成孔，并且在覆盖该孔的绝缘体表面上沉积相变材料。 在相变材料上形成约束结构，使得当加热熔化时，相变材料膨胀到孔中以与底部电极电连接。 顶部电极形成在相变材料上并电连接到相变材料上。 底部电极可以包括主要部分和具有减小的横向尺寸的延伸部。 限制结构可以包括具有比相变材料更高的熔化温度的封盖材料，以及当相变材料熔化和膨胀时具有足够的拉伸强度以确保相变材料移动到孔中。 孔可以是J形孔。

公开(公告)号：US11355552B2

公开(公告)日：2022-06-07

申请号：US16986316

申请日：2020-08-06

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L27/24 ,  H01L45/00

Abstract: A memory material and a memory device applying the same are provided. The memory material is a chalcogenide doped with carbon atom. The chalcogenide contains arsenic (As) atom, selenium (Se) atom, germanium (Ge) atom and silicon (Si) atom.

公开(公告)号：US11158787B2

公开(公告)日：2021-10-26

申请号：US16716948

申请日：2019-12-17

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: A voltage sensitive switching device has a first electrode, a second electrode, and a switching layer between the first and second electrodes, comprising a composition of carbon C, arsenic As, selenium Se and germanium Ge thermally stable to temperatures over 400° C. The switching device is used in 3D crosspoint memory.

公开(公告)号：US10978511B1

公开(公告)日：2021-04-13

申请号：US16601647

申请日：2019-10-15

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Huai-Yu Cheng ,  I-Ting Kuo ,  Hsiang-Lan Lung

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.