专利检索 ap:("Makio Iida" OR "Shoji Miura" OR "Kanemitsu Terada" OR "Hiroyuki Ban" OR "Kiyoshi Yamamoto" OR "Katsuyoshi Oda" OR "Yoshihiko Isobe") AND inv:"Kanemitsu Terada" 第 1 页

1.

发明授权
Semiconductor device having thin film resistor and method of producing same 失效
标题翻译：具有薄膜电阻器的半导体器件及其制造方法

公开(公告)号：US06287933B1

公开(公告)日：2001-09-11

申请号：US08015268

申请日：1992-01-03

申请人： Makio Iida , Shoji Miura , Kanemitsu Terada , Hiroyuki Ban , Kiyoshi Yamamoto , Katsuyoshi Oda , Yoshihiko Isobe

发明人： Makio Iida , Shoji Miura , Kanemitsu Terada , Hiroyuki Ban , Kiyoshi Yamamoto , Katsuyoshi Oda , Yoshihiko Isobe

IPC分类号： H01L2120

CPC分类号： H01L28/24

摘要： A semiconductor device having a thin film resistor which comprises at least chromium, silicon and nitrogen, and formed on a substrate with having a special ratio of the chemical composition, the semiconductor device having a characteristic such that variations of the resistance value thereof due to temperature variations can be effectively suppressed.

摘要翻译： 一种具有薄膜电阻器的半导体器件，该薄膜电阻器至少包含铬，硅和氮，并且形成在具有特定比例的化学成分的基板上，该半导体器件具有使其由于温度导致的电阻值的变化的特性可以有效地抑制变化。