Ion implantation apparatus
    1.
    发明授权
    Ion implantation apparatus 失效
    离子植入装置

    公开(公告)号:US5068539A

    公开(公告)日:1991-11-26

    申请号:US522788

    申请日:1990-05-14

    CPC分类号: H01J37/3171

    摘要: An ion implantation apparatus comprises a pair of scanning electrodes for statically scanning an ion beam in an X direction; a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction; a scanning power supply including a signal generator for generating a signal with a waveform corresponding to waveform data which is input from an outside and an amplifier for amplifying the signal and for outputting it to the pair of scanning electrodes; a multiple point monitor containing a large number of Faraday cups with same area disposed in the X direction for receiving the ion beam and for measuring the beam current; a monitor drive unit for moving the multiple point monitor to and from a radiation area of the scanned ion beam; and a control unit for obtaining the distribution of the beam current sum being entered into each Faraday cup according to the beam current measured by each Faraday cup of the multiple point monitor, for generating the waveform data so that the distribution of the beam current sum becomes flat, and for inputting the resultant data to the signal generator of the scanning power supply.

    End station for an ion implantation apparatus
    2.
    发明授权
    End station for an ion implantation apparatus 失效
    离子注入装置的终端

    公开(公告)号:US4759681A

    公开(公告)日:1988-07-26

    申请号:US819253

    申请日:1986-01-16

    申请人: Mamoru Nogami

    发明人: Mamoru Nogami

    摘要: An end station for ion implantation apparatus comprising an ion implantation process unit having a wafer holder and capable of implanting ions in wafers in a high vacuum, and a wafer supply-collection unit for the process unit. The wafer supply-collection unit comprises:(a) a plurality of cassettes being capable of accommodating wafers in a plurality of stages,(b) devices for lifting and lowering the cassette for delivering or accommodating wafers one by one,(c) stockers equal in number to the number of cassettes for accommodating wafers in a plurality of stages and for accommodating dummy wafers when required,(d) devices for lifting and lowering the stocker for accommodating or delivering wafers one by one,(e) devices extending from the cassette to the ion implantation process station via the stocker and capable of transporting wafers in the direction of reciprocation, and(f) control devices for controlling the operation of the devices described in (b), (d) and (e) above for collecting the wafer from the desired cassette and replacing in the same original supply cassette at its original position after processing thus, enabling the wafer production line to achieve an improved operation efficiency.

    摘要翻译: 一种用于离子注入装置的终端,包括具有晶片保持器并能够在高真空中将晶片植入离子的离子注入处理单元和用于处理单元的晶片供应收集单元。 晶片供应收集单元包括:(a)能够容纳多个晶片的多个盒,(b)用于提升和降低盒子以逐个传送或容纳晶片的装置,(c)储存器相等 (d)用于提升和降低用于容纳或递送晶片的储料器的装置,(e)从盒子延伸的装置,其特征在于, 通过储料器到达离子注入工艺站并且能够沿往复运动的方向输送晶片,以及(f)用于控制上述(b),(d)和(e)所述的装置的操作的控制装置,用于收集 晶片从所需的盒子中取出,并且在处理之后将其替换在原始供应盒的原始位置处,从而使得晶片生产线能够实现提高的操作效率。

    Ion implantation apparatus
    3.
    发明授权
    Ion implantation apparatus 失效
    离子注入装置

    公开(公告)号:US5046148A

    公开(公告)日:1991-09-03

    申请号:US522786

    申请日:1990-05-14

    CPC分类号: H01J37/3171 H01J37/304

    摘要: In an ion implantation apparatus comprising scanning electrodes for electrically scanning an ion beam in an X direction, a scanning power supply for supplying a scanning power to the scanning electrodes, a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction, a beam current measurement device disposed at one end section of the scanning area of the ion beam for measuring a beam current of the ion beam, and a control unit for computing the scanning speed of the target based on the beam current measured by the beam current measurement device and for controlling the drive unit so that the target is driven at the computed speed, the control unit outputs a trigger signal whenever the computation process of the scanning speed of the target is completed, and the scanning power supply outputs the scanning power for one reciprocative scanning operation of the ion beam at every time the scanning power supply receives the trigger signal from the control unit.

    Process and device for counteracting and deodorizing formalin gas
    4.
    发明授权
    Process and device for counteracting and deodorizing formalin gas 有权
    用于抵消和除臭福尔马林气体的方法和装置

    公开(公告)号:US06599470B1

    公开(公告)日:2003-07-29

    申请号:US09555326

    申请日:2000-05-24

    IPC分类号: A61L200

    摘要: A formalin gas counteracting and deodorizing device which is connected to a sterilization chamber including a main pipeline having an inlet for formalin gas at one end thereof and an outlet for processed gas at the other end, a fan connected to the inlet side midway in the main pipeline, an oxidation means for decomposition, a cooling means all connected in this order from the fan to the outlet, and a branch pipe provided between the oxidation means of the main pipeline and the cooling means. The process includes performing sterilization utilizing the sterilizer for a predetermined period of time, circulating the gas between the main pipeline, and the bypass pipe line for a predetermined period of time using the formalin gas counteracting and deodorizing device just before the end of the sterilization process, then circulating the gas between the sterilization chamber and the main pipeline for counteracting the formalin gas and introducing a counteractive into the sterilization chamber.

    摘要翻译: 福斯林气体抵消除臭装置,其与灭菌室连接,所述消毒室包括主管道,所述主管道在其一端具有福尔马林气体入口,另一端具有处理气体出口,风扇在主体中途连接到入口侧 管道,用于分解的氧化装置,全部从风扇到出口连接的冷却装置,以及设置在主管道的氧化装置和冷却装置之间的分支管。 该方法包括使用灭菌器在预定时间内进行灭菌,在灭菌过程结束之前使用福尔马林气体反作用和除臭装置在主管线和旁通管线之间循环预定时间段内的气体 然后在消毒室和主管道之间循环气体,以抵消福尔马林气体并将反作用力引入灭菌室。