Semiconductor device with test structure and semiconductor device test method
    1.
    发明申请
    Semiconductor device with test structure and semiconductor device test method 审中-公开
    具有测试结构和半导体器件测试方法的半导体器件

    公开(公告)号:US20100315114A1

    公开(公告)日:2010-12-16

    申请号:US12317138

    申请日:2009-06-22

    IPC分类号: G01R31/26 H03K3/03

    CPC分类号: G01R31/2884 G01R31/3161

    摘要: The invention relates to a semiconductor device comprising a test structure (100) for detecting variations in the structure of the semiconductor device, the test structure (100) comprising a first supply rail (110), a second supply rail (120), a ring oscillator (130) coupled between the first supply rail (110) and second supply rail (120), the ring oscillator (130) having an output (132) for providing a test result signal, and an array (140) of individually controllable transistors (142) coupled in parallel between the first supply rail (110) and the ring oscillator (130). Variations in the current output of the respective transistors (142) in the array (140) lead to variations in the respective output frequencies of the ring oscillator (130). This gives a qualitative indication of the aforementioned structural variations. More accurate results can be obtained by inclusion of a reference current source (160) for calibrating the ring oscillator (130) prior to the measurement of the current output of the individual transistors (142).

    摘要翻译: 本发明涉及一种包括用于检测半导体器件结构变化的测试结构(100)的半导体器件,该测试结构(100)包括第一电源轨(110),第二电源轨(120),环 耦合在第一电源轨道(110)和第二电源轨道(120)之间的振荡器(130),环形振荡器(130)具有用于提供测试结果信号的输出(132)和独立可控晶体管的阵列(140) (142),并联在所述第一电源轨(110)和所述环形振荡器(130)之间。 阵列(140)中的相应晶体管(142)的电流输出的变化导致环形振荡器(130)的相应输出频率的变化。 这给出了上述结构变化的定性指示。 通过在测量各个晶体管(142)的电流输出之前,包括用于校准环形振荡器(130)的参考电流源(160)可以获得更准确的结果。