公开(公告)号：US06655758B2

公开(公告)日：2003-12-02

申请号：US10035909

申请日：2001-12-19

申请人： Marco Pasotti ,  Guido De Sandre ,  Giovanni Guaitini ,  David Iezzi ,  Marco Poles ,  PierLuigi Rolandi

发明人： Marco Pasotti ,  Guido De Sandre ,  Giovanni Guaitini ,  David Iezzi ,  Marco Poles ,  PierLuigi Rolandi

IPC分类号： G11C1604

CPC分类号： G11C16/34 ,  G11C16/0441 ,  G11C16/10 ,  G11C16/28

摘要： Described herein is a method for storing a datum in a first and a second memory cells of a nonvolatile memory. The storage method envisages programming the first and second memory cells in a differential way, by setting a first threshold voltage in the first memory cell and a second threshold voltage different from the first threshold voltage in the second memory cell, the difference between the threshold voltages of the two memory cells representing a datum stored in the memory cells themselves.