公开(公告)号：US20060219947A1

公开(公告)日：2006-10-05

申请号：US11362280

申请日：2006-02-27

申请人： Marcus Van De Kerkhof ,  Harald Vos

发明人： Marcus Van De Kerkhof ,  Harald Vos

IPC分类号： G21G5/00 ,  A61N5/00

CPC分类号： G03F7/70566 ,  G03F7/70591 ,  G03F7/70616 ,  G03F7/70716 ,  G03F7/7085 ,  G03F7/70941

摘要： A system and method are used to detect parameters regarding an exposure portion or an exposure beam. The system comprising a substrate stage and a metrology stage. The substrate stage is configured to position a substrate to receive an exposure beam from an exposure portion of a lithography system. The metrology stage has a sensor system thereon that is configured to detected parameters of the exposure system or the exposure beam. In one example, the system is within a lithography system, which further comprises an illumination system, a patterning device, and a projection system. The patterning device patterns a beam of radiation from the illumination system. The projection system, which is located within the exposure portion, projects that pattered beam onto the substrate or the sensor system.