公开(公告)号：US20060245258A1

公开(公告)日：2006-11-02

申请号：US11396411

申请日：2006-03-31

申请人： Mario Saggio ,  Antonino Minnolo ,  Rosalia Germana

发明人： Mario Saggio ,  Antonino Minnolo ,  Rosalia Germana

IPC分类号： G11C11/34

CPC分类号： H01L29/0634 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1095 ,  H01L29/7803 ,  H01L29/7811

摘要： An integrated power device includes a semiconductor body of a first conductivity type comprising a first region accommodating a start-up structure, and a second region accommodating a power structure. The two structures are separated from one another by an edge structure and are arranged in a mirror configuration with respect to a symmetry line of the edge structure. Both the start-up structure and the power structure are obtained using MOSFET devices. Both MOSFET devices are multi-drain MOSFET devices, having mesh regions, source regions and gate regions separated from one another. In addition, both MOSFET devices have drain regions delimited by columns that repeat periodically at a fixed distance. Between the two MOSFET devices there is an electrical insulation of at least 25 V.

摘要翻译： 集成的功率器件包括第一导电类型的半导体本体，包括容纳启动结构的第一区域和容纳功率结构的第二区域。 这两个结构通过边缘结构彼此分离，并且相对于边缘结构的对称线布置成反射镜构造。 启动结构和功率结构均使用MOSFET器件获得。 两个MOSFET器件都是多漏极MOSFET器件，其具有彼此分离的网格区域，源极区域和栅极区域。 另外，两个MOSFET器件具有由固定距离周期性重复的列限定的漏极区域。 在两个MOSFET器件之间，电绝缘至少为25 V.