公开(公告)号：US07733655B2

公开(公告)日：2010-06-08

申请号：US12177195

申请日：2008-07-22

申请人： Martin Beaumier ,  Mohamed Belazzouz ,  Peter J Brofman ,  David L Edwards ,  Kamal K Sikka ,  Jiantao Zheng ,  Jeffrey A Zitz

发明人： Martin Beaumier ,  Mohamed Belazzouz ,  Peter J Brofman ,  David L Edwards ,  Kamal K Sikka ,  Jiantao Zheng ,  Jeffrey A Zitz

IPC分类号： H05K7/20 ,  H01L23/12 ,  H01L21/00

CPC分类号： H01L23/3675 ,  H01L23/04 ,  H01L23/10 ,  H01L23/42 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2224/838 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/3511 ,  Y10T29/49124 ,  Y10T29/4913 ,  H01L2924/00

摘要： A method attaches a semiconductor chip to a substrate, applies a thermal interface material to a top of the semiconductor chip, and positions a lid over the semiconductor chip typically attached to the substrate with an adhesive. The method applies a force near the distal ends of the lid or substrate to cause a center portion of the lid or substrate to bow away from the semiconductor chip and increases the central thickness of the thermal interface material prior to curing. While the center portion of the lid or substrate is bowed away from the semiconductor chip, the thermal interface material method increases the temperature of the assembly, thus curing the thermal interface material and lid adhesive. After the thermal interface material has and adhesive have cured, the method removes the force from near the distal ends of the lid or substrate to cause the center portion of the lid to return to a position closer to the semiconductor chip, creating a residual compressive stress in the thermal interface material thus improving thermal performance and thermal reliability.

摘要翻译： 一种方法是将半导体芯片连接到基板上，将热界面材料施加到半导体芯片的顶部，并将盖子定位在通常用粘合剂附着到基板上的半导体芯片上。 该方法在盖或基板的远端附近施加力，以使盖或基板的中心部分远离半导体芯片，并且在固化之前增加热界面材料的中心厚度。 当盖子或衬底的中心部分从半导体芯片弯曲时，热界面材料法增加了组件的温度，从而固化了热界面材料和盖子粘合剂。 在热界面材料和粘合剂已经固化之后，该方法从盖子或基底的远端附近去除力，以使盖的中心部分返回到靠近半导体芯片的位置，产生残余压应力 在热界面材料中，因此提高了热性能和热可靠性。