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    Luminescent material
    2.
    发明授权
    Luminescent material 失效
    发光材料

    公开(公告)号：US07635438B2

    公开(公告)日：2009-12-22

    申请号：US11779370

    申请日：2007-07-18

    申请人： Masaaki Tamatani ,  Hisayo Uetake ,  Ryosuke Hiramatsu ,  Kazuaki Ootsuka ,  Yasushi Hattori ,  Naomi Shida

    发明人： Masaaki Tamatani ,  Hisayo Uetake ,  Ryosuke Hiramatsu ,  Kazuaki Ootsuka ,  Yasushi Hattori ,  Naomi Shida

    IPC分类号： C09K11/79

    CPC分类号： C09K11/7734 ,  C01B33/24

    摘要： A europium-activated alkaline earth orthosilicate luminescent material is provided, which includes a compound having a composition represented by a following formula 1: (SrxBayCazEuw)2SiO4  formula 1 wherein, x, y, z and w satisfy following relational expressions 2, and 4 to 7, and are values satisfying the expression 3 when a, b, c and d are assumed to be 573, 467, 623 and 736, respectively: x+y+z+w=1  expression 2 600≦ax+by+cz+dw  expression 3 0≦x/(1−w)≦0.95  expression 4 0≦y/(1−w)≦0.4  expression 5 0

    摘要翻译： 提供了一种铕活化的碱土原硅酸盐发光材料，其包括具有由下式1表示的组成的化合物：（SrxBayCazEuw）2 SiO 4式1其中，x，y，z和w满足以下关系式2和4至 7，并且当a，b，c和d分别假定为573,467,663和736时满足表达式3的值：x + y + z + w =​​ 1表达式2 600ax + by + cz + dw表达式 3 x /（1-w）0y /（1-w）0z /（1-w）0.02 <= w发光材料表示当发光材料被紫外线激发时具有600nm以上的峰值波长的发射带 具有254nm波长的辐射。

    Fluorescent substance and light-emitting device using the same
    7.
    发明授权
    Fluorescent substance and light-emitting device using the same 有权
    荧光物质和使用其的发光装置

    公开(公告)号：US07572391B2

    公开(公告)日：2009-08-11

    申请号：US12142078

    申请日：2008-06-19

    申请人： Naomi Shida ,  Masaaki Tamatani ,  Yoshihito Tsutsui ,  Kazuaki Ootsuka ,  Ryosuke Hiramatsu

    发明人： Naomi Shida ,  Masaaki Tamatani ,  Yoshihito Tsutsui ,  Kazuaki Ootsuka ,  Ryosuke Hiramatsu

    IPC分类号： C09K11/59 ,  C09K11/55

    CPC分类号： H05B33/14 ,  C09K11/7734 ,  C09K11/7792 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996 ,  Y10T428/2998 ,  H01L2924/00014

    摘要： An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.

    摘要翻译： 提供一种制造荧光物质的方法，其包括将Eu原料，Si原料，至少一种碱土金属的原料粉末和选自La， Gd，Cs和K，得到原料混合物; 预焙烧混合物以获得烘焙材料; 混合焙烧的材料并在由N 2 / H 2的混合气体组成的还原气氛中进行焙烧以获得第一烧制产品; 粉碎第一烧制产品以获得粉碎的第一烧制产品;在粉碎的第一烧制产物在N2 / H2的还原气氛中焙烧，得到由碱土金属硅酸盐组成的荧光物质; 粉碎荧光物质以获得荧光颗粒; 筛分荧光颗粒; 并在荧光颗粒的表面上提供表面覆盖材料。

    Fluorescent substance and light-emitting device using the same
    8.
    发明授权
    Fluorescent substance and light-emitting device using the same 有权
    荧光物质和使用其的发光装置

    公开(公告)号：US07799245B2

    公开(公告)日：2010-09-21

    申请号：US12503409

    申请日：2009-07-15

    申请人： Naomi Shida ,  Masaaki Tamatani ,  Yoshihito Tsutsui ,  Kazuaki Ootsuka ,  Ryosuke Hiramatsu

    发明人： Naomi Shida ,  Masaaki Tamatani ,  Yoshihito Tsutsui ,  Kazuaki Ootsuka ,  Ryosuke Hiramatsu

    IPC分类号： C09K11/59 ,  C09K11/55 ,  C09K11/02

    CPC分类号： H05B33/14 ,  C09K11/7734 ,  C09K11/7792 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996 ,  Y10T428/2998 ,  H01L2924/00014

    摘要： A method for manufacturing a fluorescent substance is provided, which includes mixing a raw material for Eu, a raw material for Si, at least one raw material powder of alkaline earth, and at least one selected from the group consisting of raw materials for La , Gd, Cs, and K to obtain a mixture of raw materials; pre-firing the mixture to obtain a baked material; mixing the baked material and firing in a reducing atmosphere consisting of a mixed gas of N2/H2 to obtain a first fired product; pulverizing the first fired product to obtain a pulverized first fired product; firing the pulverized first fired product in a reducing atmosphere consisting of N2/H2 to obtain a fluorescent substance consisting of an alkaline earth ortho-silicate; pulverizing the fluorescent substance to obtain a fluorescent particle; sieving the fluorescent particle; and providing a surface-covering material on a surface of the fluorescent particle.

    摘要翻译： 本发明提供一种荧光体的制造方法，其特征在于，将Eu原料，Si原料，碱土金属的至少一种原料粉末和La， Gd，Cs和K，得到原料混合物; 预先烧制混合物以获得烘焙材料; 混合焙烧的材料并在由N 2 / H 2的混合气体组成的还原气氛中进行焙烧以获得第一烧制产品; 粉碎第一烧制产品以获得粉碎的第一烧制产品; 在由N2 / H2组成的还原气氛中烧制粉碎的第一次焙烧产物，得到由碱土金属硅酸盐组成的荧光体; 粉碎荧光物质以获得荧光颗粒; 筛分荧光颗粒; 并在荧光颗粒的表面上提供表面覆盖材料。

    FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE USING THE SAME
    10.
    发明申请
    FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE USING THE SAME 有权
    使用相同的荧光物质和发光装置

    公开(公告)号：US20090285995A1

    公开(公告)日：2009-11-19

    申请号：US12503409

    申请日：2009-07-15

    申请人： Naomi Shida ,  Masaaki Tamatani ,  Yoshihito Tsutsui ,  Kazuaki Ootsuka ,  Ryosuke Hiramatsu

    发明人： Naomi Shida ,  Masaaki Tamatani ,  Yoshihito Tsutsui ,  Kazuaki Ootsuka ,  Ryosuke Hiramatsu

    IPC分类号： B05D3/02 ,  C09K11/55

    CPC分类号： H05B33/14 ,  C09K11/7734 ,  C09K11/7792 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996 ,  Y10T428/2998 ,  H01L2924/00014

    摘要： An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.

    摘要翻译： 场效应晶体管包括第一半导体区域，绝缘地设置在第一半导体区域上的栅极电极，夹在第一半导体区域之间的源极和漏极电极以及形成在第一半导体区域和源极之一之间的第二半导体区域 和漏电极，其杂质浓度高于第一半导体区域，源电极在源电极和漏电极相对于沟道方向彼此分离的方向上偏移到栅电极， 并且所述第二半导体区域中的一个具有不大于所述第二半导体区域中的所述第二半导体区域在所述沟道方向上完全耗尽的厚度的厚度与所述源极电极处于热平衡。