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    Method for Manufacturing Semiconductor Wafer
    1.
    发明申请
    Method for Manufacturing Semiconductor Wafer 有权
    半导体晶片制造方法

    公开(公告)号：US20090047526A1

    公开(公告)日：2009-02-19

    申请号：US11840615

    申请日：2007-08-17

    申请人： Masaharu Ninomiya ,  Koji Matsumoto ,  Masahiko Nakamae ,  Masanobu Miyao ,  Taizoh Sadoh

    发明人： Masaharu Ninomiya ,  Koji Matsumoto ,  Masahiko Nakamae ,  Masanobu Miyao ,  Taizoh Sadoh

    IPC分类号： H01L21/20 ,  B32B9/04

    CPC分类号： H01L21/76254

    摘要： A method for manufacturing a semiconductor wafer with a strained Si layer having sufficient tensile strain and few crystal defects, while achieving a relatively simple layered structure, is provided. The method includes the steps of: (a) forming an SiGe mixed crystal layer 12 and a first Si layer 13 in this order on the surface of a silicon wafer 11; (b) forming an SiO2 layer 16 on top of the first Si layer and/or a support wafer 14; (c) forming a layered product 17 by stacking the silicon wafer and the support wafer with the SiO2 layer being placed therebetween; (d) forming a second Si layer 18 by thinning the silicon wafer of the layered product; (e) implanting hydrogen ion and/or rare gas ion, such that ionic concentration peaks in a predetermined area; (f) subjecting the layered product to a first heat treatment; and (g) carrying out a second heat treatment following the first heat treatment, thereby relaxing the SiGe mixed crystal layer and diffusing Ge through portions of the first Si layer and the second Si layer.

    摘要翻译： 本发明提供一种制造半导体晶片的方法，该半导体晶片具有具有足够的拉伸应变和很少的晶体缺陷的应变Si层，同时实现相对简单的分层结构。 该方法包括以下步骤：（a）在硅晶片11的表面上依次形成SiGe混晶层12和第一Si层13; （b）在第一Si层和/或支撑晶片14的顶部上形成SiO2层16; （c）通过将硅晶片和支撑晶片叠置在其间的SiO 2层来形成层叠体17; （d）通过使层叠体的硅晶片变薄来形成第二Si层18; （e）植入氢离子和/或稀有气体离子，使得离子浓度在预定区域中峰值; （f）对层叠体进行第一次热处理; 和（g）在第一热处理之后进行第二热处理，从而使SiGe混晶层松弛，并通过第一Si层和第二Si层的一部分扩散Ge。

    Method for manufacturing semiconductor wafer including a strained silicon layer
    2.
    发明授权
    Method for manufacturing semiconductor wafer including a strained silicon layer 有权
    包括应变硅层的半导体晶片的制造方法

    公开(公告)号：US07767548B2

    公开(公告)日：2010-08-03

    申请号：US11840615

    申请日：2007-08-17

    申请人： Masaharu Ninomiya ,  Koji Matsumoto ,  Masahiko Nakamae ,  Masanobu Miyao ,  Taizoh Sadoh

    发明人： Masaharu Ninomiya ,  Koji Matsumoto ,  Masahiko Nakamae ,  Masanobu Miyao ,  Taizoh Sadoh

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254

    摘要： A method for manufacturing a semiconductor wafer with a strained Si layer having sufficient tensile strain and few crystal defects, while achieving a relatively simple layered structure, is provided. The method includes the steps of: (a) forming an SiGe mixed crystal layer 12 and a first Si layer 13 in this order on the surface of a silicon wafer 11; (b) forming an SiO2 layer 16 on top of the first Si layer and/or a support wafer 14; (c) forming a layered product 17 by stacking the silicon wafer and the support wafer with the SiO2 layer being placed therebetween; (d) forming a second Si layer 18 by thinning the silicon wafer of the layered product; (e) implanting hydrogen ion and/or rare gas ion, such that ionic concentration peaks in a predetermined area; (f) subjecting the layered product to a first heat treatment; and (g) carrying out a second heat treatment following the first heat treatment, thereby relaxing the SiGe mixed crystal layer and diffusing Ge through portions of the first Si layer and the second Si layer.

    摘要翻译： 本发明提供一种制造半导体晶片的方法，该半导体晶片具有具有足够的拉伸应变和很少的晶体缺陷的应变Si层，同时实现相对简单的分层结构。 该方法包括以下步骤：（a）在硅晶片11的表面上依次形成SiGe混晶层12和第一Si层13; （b）在第一Si层和/或支撑晶片14的顶部上形成SiO2层16; （c）通过将硅晶片和支撑晶片叠置在其间的SiO 2层来形成层叠体17; （d）通过使层叠体的硅晶片变薄来形成第二Si层18; （e）植入氢离子和/或稀有气体离子，使得离子浓度在预定区域中峰值; （f）对层叠体进行第一次热处理; 和（g）在第一热处理之后进行第二热处理，从而使SiGe混晶层松弛，并通过第一Si层和第二Si层的一部分扩散Ge。