公开(公告)号：US06797996B1

公开(公告)日：2004-09-28

申请号：US10445035

申请日：2003-05-27

申请人： Masahiro Hikita ,  Manabu Yanagihara ,  Tuyoshi Tanaka

发明人： Masahiro Hikita ,  Manabu Yanagihara ,  Tuyoshi Tanaka

IPC分类号： H01L29737

CPC分类号： H01L29/66318 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/365 ,  H01L29/7371

摘要： A compound semiconductor device includes an emitter layer, a base layer which is in contact with the emitter layer and formed of a first compound semiconductor, a collector layer which is in contact with the base layer and formed of a second compound semiconductor having a wider bandgap than that of the first compound semiconductor. In the device, a delta doped layer having a higher concentration of an impurity than that of the collector layer is formed at the heterojunction interface between the collector layer and the base layer or in a region of the collector layer located at about 10 nm or less from the heterojunction interface with the base layer.

摘要翻译： 化合物半导体器件包括发射极层，与发射极层接触并由第一化合物半导体形成的基极层，与基极层接触并由具有较宽带隙的第二化合物半导体形成的集电极层 比第一化合物半导体。 在器件中，在集电极层和基极层之间的异质结界面处或在位于约10nm以下的集电极层的区域中形成杂质浓度高于集电极层的Δ掺杂层 从与基层的异质结界面。