公开(公告)号：US4803546A

公开(公告)日：1989-02-07

申请号：US154046

申请日：1988-02-09

申请人： Masahiro Sugimoto ,  Yasumasa Wakasugi

发明人： Masahiro Sugimoto ,  Yasumasa Wakasugi

IPC分类号： H01L23/055 ,  H01L23/367 ,  H01L23/12 ,  H01L23/36

CPC分类号： H01L23/3675 ,  H01L23/055 ,  H01L24/40 ,  H01L2224/40225 ,  H01L2924/01079 ,  H01L2924/15312

摘要： A semiconductor device which includes a substrate, a semiconductor element mounted on the substrate, a cap having an opening smaller than the external size of the semiconductor element for covering the semiconductor element to provide a hermetic seal, and a heatsink member mounted on the cap covering the opening and making contact with the semiconductor element via the opening. Heat generated by the semiconductor element is conducted directly to the heatsink member. A method of producing the semiconductor device includes mounting the semiconductor element onto the substrate, covering the semiconductor element with a cap which is fixed to the substrate, and mounting the heatsink member on the cap for covering the opening and making contact with the semicondutor element via the opening.

摘要翻译： 一种半导体器件，包括衬底，安装在衬底上的半导体元件，具有比用于覆盖半导体元件以提供气密密封的半导体元件的外部尺寸小的开口的帽以及安装在帽盖上的散热构件 通过开口与半导体元件的开口和接触。 由半导体元件产生的热量直接传导到散热件。 一种半导体装置的制造方法，其特征在于，将半导体元件安装在基板上，用固定在基板上的盖覆盖半导体元件，将散热构件安装在盖上，覆盖开口并与半导体元件接触， 开幕。

公开(公告)号：US4742024A

公开(公告)日：1988-05-03

申请号：US076762

申请日：1987-07-23

申请人： Masahiro Sugimoto ,  Yasumasa Wakasugi ,  Shigeki Harada

发明人： Masahiro Sugimoto ,  Yasumasa Wakasugi ,  Shigeki Harada

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/055 ,  H01L23/34 ,  H01L23/367 ,  H01L39/02

CPC分类号： H01L23/055 ,  H01L23/3675 ,  H01L2224/32225 ,  H01L2924/01079 ,  Y10T29/4913 ,  Y10T29/53174 ,  Y10T29/53178

摘要： A semiconductor device comprises a substrate, a semiconductor element mounted on the substrate, a cap having an opening smaller than the external size of the semiconductor element for covering the semiconductor element to provide a hermetic seal, and a heatsink member mounted on the cap to cover the opening and to make contact with the semiconductor element via the opening, so that heat generated by the semiconductor element is conducted directly to the heatsink member. A method of producing the semiconductor device comprises the steps of mounting the semiconductor element on the substrate, covering the semiconductor element by the cap which is fixed to the substrate, and mounting the heatsink member on the cap to cover the opening and to make contact with the semiconductor element via the opening.

公开(公告)号：US4891344A

公开(公告)日：1990-01-02

申请号：US943350

申请日：1986-12-19

申请人： Yasumasa Wakasugi ,  Masahiro Sugimoto

发明人： Yasumasa Wakasugi ,  Masahiro Sugimoto

IPC分类号： C04B35/18 ,  C04B35/195 ,  H01B3/12 ,  H01L23/15 ,  H05K1/03

CPC分类号： C04B35/18 ,  C04B35/195 ,  H01L23/15 ,  H01L2924/0002 ,  H05K1/0306

摘要： A low dielectric constant ceramic substrate comprised of 90 to 98% of mullite (3Al.sub.2 O.sub.3. 2SiO.sub.2) and 10 to 2% of a sintering promotor comprised of 0.5 to 3% of magnesia (MgO) and 1.5 to 7% of calcium oxide (CaO).

摘要翻译： 低介电常数陶瓷基体由90％〜98％的莫来石（3Al2O3·2SiO2）和10〜2％的由0.5〜3％的氧化镁（MgO）和1.5〜7％的氧化钙（CaO）构成的烧结促进剂组成， 。

公开(公告)号：US4698663A

公开(公告)日：1987-10-06

申请号：US937414

申请日：1986-12-03

申请人： Masahiro Sugimoto ,  Yasumasa Wakasugi ,  Shigeki Harada

发明人： Masahiro Sugimoto ,  Yasumasa Wakasugi ,  Shigeki Harada

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/055 ,  H01L23/34 ,  H01L23/367

CPC分类号： H01L23/055 ,  H01L23/3675 ,  H01L2224/32225 ,  H01L2924/01079 ,  Y10T29/4913 ,  Y10T29/53174 ,  Y10T29/53178

摘要： A semiconductor device comprises a substrate, a semiconductor element mounted on the substrate, a cap having an opening smaller than the external size of the semiconductor element for covering the semiconductor element to provide a hermetic seal, and a heatsink member mounted on the cap to cover the opening and to make contact with the semiconductor element via the opening, so that heat generated by the semiconductor element is conducted directly to the heatsink member. A method of producing the semiconductor device comprises the steps of mounting the semiconductor element on the substrate, covering the semiconductor element by the cap which is fixed to the substrate, and mounting the heatsink member on the cap to cover the opening and to make contact with the semiconductor element via the opening.

摘要翻译： 半导体器件包括衬底，安装在衬底上的半导体元件，具有比用于覆盖半导体元件以提供气密密封的半导体元件的外部尺寸小的开口的帽以及安装在帽上的散热构件以覆盖 开口，并且经由开口与半导体元件接触，使得由半导体元件产生的热直接传导到散热构件。 一种制造半导体器件的方法包括以下步骤：将半导体元件安装在基板上，通过固定到基板的盖覆盖半导体元件，并将散热构件安装在盖上以覆盖开口并与 半导体元件经由开口。