公开(公告)号：US6046929A

公开(公告)日：2000-04-04

申请号：US282469

申请日：1999-03-31

申请人： Masaki Aoki ,  Akio Itoh ,  Mitsuteru Mushiga ,  Ko Nakamura ,  Takashi Eshita

发明人： Masaki Aoki ,  Akio Itoh ,  Mitsuteru Mushiga ,  Ko Nakamura ,  Takashi Eshita

IPC分类号： G11C11/22 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11507 ,  G11C11/223

摘要： The source region and gate electrode of a field effect transistor including a drain region and a gate electrode in addition to the source region are connected by a first ferroelectric capacitor. The drain region and gate electrode are connected by a second ferroelectric capacitor. A ferroelectric memory device suitable for high integration is provided.

摘要翻译： 除了源极区域之外，包括漏极区域和栅极电极的源极区域和栅极电极通过第一铁电体电容器连接。 漏区和栅极通过第二铁电电容器连接。 提供了适用于高集成度的铁电存储器件。