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公开(公告)号：US20070287215A1
公开(公告)日：2007-12-13
申请号：US11798676
申请日：2007-05-16
IPC分类号： H01L21/00
CPC分类号： B81C1/00896 , B23K26/40 , B23K2101/40 , B23K2103/50 , B81B2201/0257
摘要： A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer 101 to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.
摘要翻译： 一种制造半导体器件的方法包括：在包括在半导体晶片中的多个芯片中的每一个的预定区域上形成振动膜的步骤（a）; 在半导体晶片上形成包含位于每个芯片的振动膜上的牺牲层的中间膜的步骤（b） 以及在中间膜上形成固定膜的步骤（c）。 该方法还包括在步骤（c）之后，对半导体晶片101进行刀片切割以分离芯片的步骤（d）和通过蚀刻去除牺牲层以提供空腔的步骤（e） 在振动膜和固定膜之间。
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公开(公告)号：US20100022046A1
公开(公告)日：2010-01-28
申请号：US12578040
申请日：2009-10-13
IPC分类号： H01L21/00
CPC分类号： B81C1/00896 , B23K26/40 , B23K2101/40 , B23K2103/50 , B81B2201/0257
摘要： A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.
摘要翻译： 一种制造半导体器件的方法包括：在包括在半导体晶片中的多个芯片中的每一个的预定区域上形成振动膜的步骤（a）; 在半导体晶片上形成包含位于每个芯片的振动膜上的牺牲层的中间膜的步骤（b） 以及在中间膜上形成固定膜的步骤（c）。 该方法还包括在步骤（c）之后，对半导体晶片进行切片以分离芯片的步骤（d），以及通过蚀刻去除牺牲层以在第 振动膜和固定膜。
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公开(公告)号：US20110039365A1
公开(公告)日：2011-02-17
申请号：US12913340
申请日：2010-10-27
IPC分类号： H01L21/02
CPC分类号： B81C1/00896 , B23K26/40 , B23K2101/40 , B23K2103/50 , B81B2201/0257
摘要： A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.
摘要翻译： 一种制造半导体器件的方法包括：在包括在半导体晶片中的多个芯片中的每一个的预定区域上形成振动膜的步骤（a）; 在半导体晶片上形成包含位于每个芯片的振动膜上的牺牲层的中间膜的步骤（b） 以及在中间膜上形成固定膜的步骤（c）。 该方法还包括在步骤（c）之后，对半导体晶片进行切片以分离芯片的步骤（d），以及通过蚀刻去除牺牲层以在第 振动膜和固定膜。
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公开(公告)号：US07838323B2
公开(公告)日：2010-11-23
申请号：US12578040
申请日：2009-10-13
IPC分类号： H01L21/00
CPC分类号： B81C1/00896 , B23K26/40 , B23K2101/40 , B23K2103/50 , B81B2201/0257
摘要： A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.
摘要翻译： 一种制造半导体器件的方法包括：在包括在半导体晶片中的多个芯片中的每一个的预定区域上形成振动膜的步骤（a）; 在半导体晶片上形成包含位于每个芯片的振动膜上的牺牲层的中间膜的步骤（b） 以及在中间膜上形成固定膜的步骤（c）。 该方法还包括在步骤（c）之后，对半导体晶片进行切片以分离芯片的步骤（d），以及通过蚀刻去除牺牲层以在第 振动膜和固定膜。
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公开(公告)号：US20080203538A1
公开(公告)日：2008-08-28
申请号：US12149148
申请日：2008-04-28
CPC分类号： H01L23/585 , B23K26/40 , B23K2103/50 , H01L21/78 , H01L23/544 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A plurality of semiconductor elements and division regions are provided on a semiconductor subsubstrate. A modification region is provided in the semiconductor substrate. A division guide pattern is provided at least in a portion of each division region. A cleavage produced from a starting point corresponding to the modification region is guided by the division guide pattern.
摘要翻译： 在半导体子衬底上设置多个半导体元件和分割区域。 在半导体衬底中设置修改区域。 至少在每个划分区域的一部分中提供分区引导图案。 从对应于修改区域的起点产生的切割由分割引导图案引导。
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6.发明申请Semiconductor wafer, semiconductor device manufacturing method, and semiconductor device 审中-公开半导体晶片，半导体器件制造方法和半导体器件公开(公告)号：US20060163699A1
公开(公告)日：2006-07-27
申请号：US11288378
申请日：2005-11-29
IPC分类号： H01L23/544
CPC分类号： H01L23/585 , B23K26/40 , B23K2103/50 , H01L21/78 , H01L23/544 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A plurality of semiconductor elements and division regions are provided on a semiconductor substrate. A modification region is provided in the semiconductor substrate. A division guide pattern is provided at least in a portion of each division region. A cleavage produced from a starting point corresponding to the modification region is guided by the division guide pattern.
摘要翻译： 在半导体基板上设置多个半导体元件和分割区域。 在半导体衬底中设置修改区域。 至少在每个划分区域的一部分中提供分区引导图案。 从对应于修改区域的起点产生的切割由分割引导图案引导。
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7.发明申请Semiconductor substrate, semiconductor device and method of manufacturing the same 审中-公开半导体衬底，半导体器件及其制造方法公开(公告)号：US20110108957A1
公开(公告)日：2011-05-12
申请号：US12926772
申请日：2010-12-08
申请人： Masaki Utsumi , Takahiro Kumakawa
发明人： Masaki Utsumi , Takahiro Kumakawa
IPC分类号： H01L23/544 , H01L21/302
CPC分类号： B23K26/60 , B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011 , H01L2924/10158 , H01L2924/16195 , H01L2924/16235
摘要： A semiconductor substrate (1) includes a plurality of semiconductor elements (2) in which functional elements are constructed and which is formed in a grid pattern, wherein continuous linear grooves (3) are formed on longitudinal and lateral separating lines (4) that individually separate the plurality of semiconductor elements (2) with the exception of intersections of the separating lines (4) and portions corresponding to corners of each semiconductor element (2).
摘要翻译： 半导体衬底（1）包括多个半导体元件（2），其中构成功能元件并且形成为格栅图案，其中连续的直线槽（3）分别形成在纵向和横向分隔线（4）上 除了分离线（4）的交点和对应于每个半导体元件（2）的角部的部分之外，分离多个半导体元件（2）。
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8.发明申请SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权半导体衬底，半导体器件及其制造方法公开(公告)号：US20090218660A1
公开(公告)日：2009-09-03
申请号：US12391671
申请日：2009-02-24
申请人： Masaki Utsumi , Takahiro Kumakawa
发明人： Masaki Utsumi , Takahiro Kumakawa
IPC分类号： H01L23/544 , H01L21/302
CPC分类号： B23K26/60 , B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011 , H01L2924/10158 , H01L2924/16195 , H01L2924/16235
摘要： A semiconductor substrate (1) includes a plurality of semiconductor elements (2) in which functional elements are constructed and which is formed in a grid pattern, wherein continuous linear grooves (3) are formed on longitudinal and lateral separating lines (4) that individually separate the plurality of semiconductor elements (2) with the exception of intersections of the separating lines (4) and portions corresponding to corners of each semiconductor element (2).
摘要翻译： 半导体衬底（1）包括多个半导体元件（2），其中构成功能元件并且形成为格栅图案，其中连续的直线槽（3）分别形成在纵向和横向分隔线（4）上 除了分离线（4）的交点和对应于每个半导体元件（2）的角部的部分之外，分离多个半导体元件（2）。
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公开(公告)号：US07859084B2
公开(公告)日：2010-12-28
申请号：US12391671
申请日：2009-02-24
申请人： Masaki Utsumi , Takahiro Kumakawa
发明人： Masaki Utsumi , Takahiro Kumakawa
IPC分类号： H01L23/544
CPC分类号： B23K26/60 , B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011 , H01L2924/10158 , H01L2924/16195 , H01L2924/16235
摘要： A semiconductor substrate (1) includes a plurality of semiconductor elements (2) in which functional elements are constructed and which is formed in a grid pattern, wherein continuous linear grooves (3) are formed on longitudinal and lateral separating lines (4) that individually separate the plurality of semiconductor elements (2) with the exception of intersections of the separating lines (4) and portions corresponding to corners of each semiconductor element (2).
摘要翻译： 半导体衬底（1）包括多个半导体元件（2），其中构成功能元件并且形成为格栅图案，其中连续的直线槽（3）分别形成在纵向和横向分隔线（4）上 除了分离线（4）的交点和对应于每个半导体元件（2）的角部的部分之外，分离多个半导体元件（2）。
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公开(公告)号：US20090108410A1
公开(公告)日：2009-04-30
申请号：US12137018
申请日：2008-06-11
IPC分类号： H01L23/544
CPC分类号： H01L23/585 , H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate, a diffusion layer conductive film formed on the semiconductor substrate, an interlayer insulating film layered on the semiconductor substrate, an interconnect pattern and a via pattern formed in the interlayer insulating film, a plurality of circuit regions formed in the semiconductor substrate, and a scribe region formed around the circuit regions and separating the circuit regions from each other. The diffusion layer conductive film is not formed at least in a region to which laser light is emitted in the scribe region.
摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的扩散层导电膜，层叠在半导体衬底上的层间绝缘膜，形成在层间绝缘膜中的布线图案和通孔图案，多个电路区域形成在 半导体衬底和形成在电路区域周围并将电路区域彼此分离的划线区域。 扩散层导电膜至少在划线区域内不会形成激光的区域。
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