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    Method for fabricating semiconductor device
    2.
    发明申请
    Method for fabricating semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20070287215A1

    公开(公告)日：2007-12-13

    申请号：US11798676

    申请日：2007-05-16

    申请人： Masaki Utsumi ,  Takahiro Kumakawa ,  Masami Matsuura ,  Yoshihiro Matsushima

    发明人： Masaki Utsumi ,  Takahiro Kumakawa ,  Masami Matsuura ,  Yoshihiro Matsushima

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00896 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B81B2201/0257

    摘要： A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer 101 to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.

    摘要翻译： 一种制造半导体器件的方法包括：在包括在半导体晶片中的多个芯片中的每一个的预定区域上形成振动膜的步骤（a）; 在半导体晶片上形成包含位于每个芯片的振动膜上的牺牲层的中间膜的步骤（b） 以及在中间膜上形成固定膜的步骤（c）。 该方法还包括在步骤（c）之后，对半导体晶片101进行刀片切割以分离芯片的步骤（d）和通过蚀刻去除牺牲层以提供空腔的步骤（e） 在振动膜和固定膜之间。

    Optical ferrule
    3.
    发明授权
    Optical ferrule 失效
    光学套圈

    公开(公告)号：US5187762A

    公开(公告)日：1993-02-16

    申请号：US849342

    申请日：1992-03-11

    申请人： Masami Matsuura ,  Hisakazu Okajima

    发明人： Masami Matsuura ,  Hisakazu Okajima

    IPC分类号： G02B6/24 ,  G02B6/36 ,  G02B6/38

    CPC分类号： G02B6/3861 ,  G02B6/3835

    摘要： An optical ferrule including a non-metallic sleeve 11 formed with a through bore having a small bore portion 14 and a large bore portion 1. A bare fiber 13 and a coating 15 of an optical fiber 12 are adhesively fixed in the small bore portion and the large bore portion, respectively. The large bore portion 16 has at least one groove 17 formed in the inner surface thereof, the optical fiber has a rough surface portion 20 formed in the coating in at least a portion opposing to the groove, a glass tube 18 is inserted in the large bore portion between the small bore portion and the end face of the coating of the optical fiber and has an outer diameter larger than the inner diameter of the small bore portion and an inner diameter adapted for insertion of the bare fiber, and an adhesive 21 is filled between the components including the inner surface of the sleeve. The optical ferrule has superior reliability, durability and stability.

    摘要翻译： 一种光学套圈，包括形成有具有小孔部分14和大孔部分1的通孔的非金属套筒11.光纤12的裸光纤13和涂层15粘合地固定在小孔部分中， 大孔部分。 大孔部分16具有形成在其内表面中的至少一个凹槽17，光纤具有形成在涂层中的与凹槽相对的至少一部分的粗糙表面部分20，玻璃管18插入大 在小孔部分和光纤的涂层的端面之间的孔部分具有大于小孔部分的内径的外径和适于插入裸纤维的内径，并且粘合剂21是 填充在包括套筒的内表面的部件之间。 光学套圈具有优异的可靠性，耐用性和稳定性。

    Optical unit including a substrate and optical element supported on the substrate such that thermal stresses are prevented from being exerted on the optical element
    4.
    发明授权
    Optical unit including a substrate and optical element supported on the substrate such that thermal stresses are prevented from being exerted on the optical element 失效
    光学单元包括基板和支撑在基板上的光学元件，从而防止热应力施加在光学元件上

    公开(公告)号：US5035495A

    公开(公告)日：1991-07-30

    申请号：US494817

    申请日：1990-03-15

    申请人： Shuhei Toyoda ,  Syunzo Mase ,  Masami Matsuura ,  Shogo Kawaguchi

    发明人： Shuhei Toyoda ,  Syunzo Mase ,  Masami Matsuura ,  Shogo Kawaguchi

    IPC分类号： G02B6/42 ,  G02B7/00 ,  H01S5/02

    CPC分类号： G02B7/008 ,  G02B6/4236 ,  G02B6/4239

    摘要： An optical unit as used for an optical sensor, including a substrate, one or more optical elements fixedly supported by the substrate, and an protecting arrangement associated with the substrate and at least one of the optical elements, for protecting each associated optical element from thermal stresses exerted thereto due to a difference in thermal expansion coefficient between the substrate and the associated optical element. The protecting arrangement may consist of at least one intermediate body interposed between the substrate and the associated optical element. Each intermediate body has a thermal expansion coefficient close to that of the associated optical element. Alternatively, the protecting arrangement may consist of a constricted protecting portion such as protrusions or slots formed on one of the associated optical elements and the substrate, such that the protecting portion defines an adjoining interface between the optical element and the substrate, or is located adjacent to the adjoining interface.

    摘要翻译： 用于光学传感器的光学单元，包括基底，由基底固定支撑的一个或多个光学元件，以及与基底和至少一个光学元件相关联的保护装置，用于保护每个相关联的光学元件免受热 由于基板和相关联的光学元件之间的热膨胀系数的差异而施加的应力。 保护装置可以包括插入在基板和相关联的光学元件之间的至少一个中间体。 每个中间体的热膨胀系数接近相关光学元件的热膨胀系数。 或者，保护装置可以包括收缩的保护部分，例如形成在相关联的光学元件和基板之一上的突起或槽，使得保护部分限定光学元件和基板之间的邻接界面，或者位于相邻 到相邻的界面。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20110039365A1

    公开(公告)日：2011-02-17

    申请号：US12913340

    申请日：2010-10-27

    申请人： Masaki UTSUMI ,  Takahiro Kumakawa ,  Masami Matsuura ,  Yoshihiro Matsushima

    发明人： Masaki UTSUMI ,  Takahiro Kumakawa ,  Masami Matsuura ,  Yoshihiro Matsushima

    IPC分类号： H01L21/02

    CPC分类号： B81C1/00896 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B81B2201/0257

    摘要： A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.

    摘要翻译： 一种制造半导体器件的方法包括：在包括在半导体晶片中的多个芯片中的每一个的预定区域上形成振动膜的步骤（a）; 在半导体晶片上形成包含位于每个芯片的振动膜上的牺牲层的中间膜的步骤（b） 以及在中间膜上形成固定膜的步骤（c）。 该方法还包括在步骤（c）之后，对半导体晶片进行切片以分离芯片的步骤（d），以及通过蚀刻去除牺牲层以在第 振动膜和固定膜。

    Method for fabricating semiconductor device
    6.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07838323B2

    公开(公告)日：2010-11-23

    申请号：US12578040

    申请日：2009-10-13

    申请人： Masaki Utsumi ,  Takahiro Kumakawa ,  Masami Matsuura ,  Yoshihiro Matsushima

    发明人： Masaki Utsumi ,  Takahiro Kumakawa ,  Masami Matsuura ,  Yoshihiro Matsushima

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00896 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B81B2201/0257

    摘要： A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.

    摘要翻译： 一种制造半导体器件的方法包括：在包括在半导体晶片中的多个芯片中的每一个的预定区域上形成振动膜的步骤（a）; 在半导体晶片上形成包含位于每个芯片的振动膜上的牺牲层的中间膜的步骤（b） 以及在中间膜上形成固定膜的步骤（c）。 该方法还包括在步骤（c）之后，对半导体晶片进行切片以分离芯片的步骤（d），以及通过蚀刻去除牺牲层以在第 振动膜和固定膜。

    Image forming apparatus and method using charge control means
    9.
    发明授权
    Image forming apparatus and method using charge control means 失效
    使用充电控制装置的图像形成装置和方法

    公开(公告)号：US5911097A

    公开(公告)日：1999-06-08

    申请号：US42670

    申请日：1998-03-17

    申请人： Masayasu Haga ,  Tsugihito Yoshiyama ,  Yasuhiro Nakagami ,  Masami Matsuura ,  Akira Hirota

    发明人： Masayasu Haga ,  Tsugihito Yoshiyama ,  Yasuhiro Nakagami ,  Masami Matsuura ,  Akira Hirota

    IPC分类号： G03G15/02 ,  G03G21/00

    CPC分类号： G03G15/0266 ,  G03G15/0291 ,  G03G2215/021 ,  Y10S430/102

    摘要： Applied voltage to the contact charging sheet 71 has been controlled in the following various ways: a) the voltage at the photosensitive layer 10 at a point of time whereat it has passed the contact charging sheet 71 is caused to interlock with grid voltage so as not to exceed predetermined voltage to be electrified by the Scorotron charger 2; b) the applied voltage is caused to interlock with the output from the transfer unit 5 so that there is no portion which reaches the Scorotron charger 2 while the potential polarity has been reversed at the transfer unit 5; c) reduction in the film thickness of the photosensitive layer 10 is corrected in consideration of the cumulative number of sheets for image formation; d) the size of printing sheet is added; e) at the time of termination, a portion of the photosensitive layer 10, into which current has flowed at the transfer unit 5, is caused to stop always after passing the contact charging sheet 71; f) the contact charging sheet 71 is cleaned by means of AC component; and g) the applied voltage is switched while formation of an electrostatic latent image and the like are not performed. Thereby, the surface potential at the photosensitive drum 1 is prevented from becoming ununiform.

    摘要翻译： 接触充电片71的施加电压已经以下列各种方式进行了控制：a）使感光层10在已经通过接触充电片71的时间点处的电压与电网电压互锁，使得不 超过预定电压由Scorotron充电器2带电; b）使施加的电压与转印单元5的输出互锁，使得在转印单元5处的电位极性已经反转的情况下，没有到达Scorotron充电器2的部分; c）考虑到用于图像形成的片材的累积数量来校正感光层10的膜厚度的减小; d）添加打印纸的尺寸; e）在终止时，使电流在转印单元5处流动的感光层10的一部分在通过接触充电片71之后始终停止; f）接触充电片71通过AC部件清洁; 并且g）在不形成静电潜像等的情况下切换所施加的电压。 由此，能够防止感光鼓1的表面电位变得不均匀。