Semiconductor device provided with sense circuits
    1.
    发明授权
    Semiconductor device provided with sense circuits 失效
    设置有感测电路的半导体器件

    公开(公告)号:US5341013A

    公开(公告)日:1994-08-23

    申请号:US905661

    申请日:1992-06-29

    CPC分类号: H01L27/088

    摘要: A semiconductor device provided with a plurality of sense circuits, each sense circuit including a pair of MOS transistors such that their sources are commonly connected, and that the drain of one transistor and the gate of the other transistor are cross-coupled each other to, thus, sense a difference between potentials applied to the respective gates. The paired transistors respectively include one transistor regions, and are disposed with their source regions being shared among the plurality of sense circuits. These sense circuits are disposed in a manner to share the source regions of the respective transistors. When elimination of only isolation between sense circuits meets with a required miniaturization of the device, paired transistors constituting sense circuits may include two transistor regions or more connected in parallel, respectively.

    摘要翻译: 一种设置有多个感测电路的半导体器件,每个感测电路包括一对MOS晶体管,使得它们的源极共同连接,并且一个晶体管的漏极和另一个晶体管的栅极彼此交叉耦合, 因此,感测施加到各个门的电位之间的差异。 成对晶体管分别包括一个晶体管区域,并且被布置成它们的源极区域在多个感测电路之间共享。 这些感测电路以共享各个晶体管的源极区域的方式设置。 当消除感测电路之间的仅隔离器件满足设备所需的小型化时,构成感测电路的成对晶体管可以分别包括两个或多个并联连接的晶体管区域。