公开(公告)号：US20130019797A1

公开(公告)日：2013-01-24

申请号：US13548254

申请日：2012-07-13

申请人： Masaru Tanaka ,  Masashi Kuriyama ,  Hiroki Murooka

发明人： Masaru Tanaka ,  Masashi Kuriyama ,  Hiroki Murooka

IPC分类号： H01L21/687 ,  B23P17/04 ,  B05C13/00

CPC分类号： H01L21/68764 ,  H01J37/32871 ,  H01J2237/02 ,  H01J2237/0203 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T29/49

摘要： An electrostatic chuck protection method includes providing an exposed chuck surface with a protective surface for preventing adherence of foreign materials including a substance exhibiting volatility in a vacuum environment, and removing the protective surface in order to perform a process of forming a substrate electrostatically held on the chuck surface with a surface layer including a substance having volatility in a vacuum chamber. The protective surface may be provided when a low vacuum pumping mode of operation is performed in a vacuum environment surrounding the chuck surface.

摘要翻译： 静电卡盘保护方法包括：将露出的卡盘表面提供有保护表面，用于防止在真空环境中包括表现出挥发性的物质的异物附着，以及去除保护表面，以便进行静电保持在基板上的基板的形成工艺 卡盘表面具有包括在真空室中具有挥发性的物质的表面层。 当在围绕卡盘表面的真空环境中执行低真空泵送操作模式时，可以提供保护表面。

公开(公告)号：US09312163B2

公开(公告)日：2016-04-12

申请号：US13548254

申请日：2012-07-13

申请人： Masaru Tanaka ,  Masashi Kuriyama ,  Hiroki Murooka

发明人： Masaru Tanaka ,  Masashi Kuriyama ,  Hiroki Murooka

IPC分类号： H01J37/32 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01L21/68764 ,  H01J37/32871 ,  H01J2237/02 ,  H01J2237/0203 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T29/49

摘要： An electrostatic chuck protection method includes providing an exposed chuck surface with a protective surface for preventing adherence of foreign materials including a substance exhibiting volatility in a vacuum environment, and removing the protective surface in order to perform a process of forming a substrate electrostatically held on the chuck surface with a surface layer including a substance having volatility in a vacuum chamber. The protective surface may be provided when a low vacuum pumping mode of operation is performed in a vacuum environment surrounding the chuck surface.

摘要翻译： 静电卡盘保护方法包括：将露出的卡盘表面提供有保护表面，用于防止在真空环境中包括表现出挥发性的物质的异物附着，以及去除保护表面，以便进行静电保持在基板上的基板的形成工艺 卡盘表面具有包括在真空室中具有挥发性的物质的表面层。 当在围绕卡盘表面的真空环境中执行低真空泵送操作模式时，可以提供保护表面。

公开(公告)号：US20120015507A1

公开(公告)日：2012-01-19

申请号：US13183938

申请日：2011-07-15

申请人： Masaru Tanaka ,  Masashi Kuriyama ,  Hiroki Murooka

发明人： Masaru Tanaka ,  Masashi Kuriyama ,  Hiroki Murooka

IPC分类号： H01L21/223 ,  C23C16/50

CPC分类号： H01J37/32412 ,  H01J37/3244 ,  H01L21/2236

摘要： A plasma doping apparatus for adding an impurity to a semiconductor substrate includes a chamber, a gas supply unit configured for supplying gas to the chamber, and a plasma source by which to cause the chamber to generate plasma of the supplied gas. The mixed gas containing material gas containing an impurity element to be added to the semiconductor substrate, hydrogen gas, and diluent gas for diluting the material gas is supplied to the chamber.

摘要翻译： 用于向半导体衬底添加杂质的等离子体掺杂装置包括腔室，被配置为向腔室供应气体的气体供给单元以及使腔室产生供给气体的等离子体的等离子体源。 将含有添加到半导体衬底中的杂质元素的混合气体的原料气体，氢气和用于稀释原料气体的稀释气体供给到室。

公开(公告)号：US06797968B2

公开(公告)日：2004-09-28

申请号：US10329560

申请日：2002-12-27

申请人： Mitsukuni Tsukihara ,  Yoshitaka Amano ,  Mitsuaki Kabasawa ,  Michiro Sugitani ,  Hiroki Murooka ,  Hiroshi Matsushita

发明人： Mitsukuni Tsukihara ,  Yoshitaka Amano ,  Mitsuaki Kabasawa ,  Michiro Sugitani ,  Hiroki Murooka ,  Hiroshi Matsushita

IPC分类号： H01J3708

CPC分类号： H01J37/3171 ,  H01J37/3007

摘要： An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.

摘要翻译： 离子束处理装置包括从离子源到处理室的束线真空室。 该装置还包括用于将来自离子源的离子束通过束线真空室输送到处理室的束线结构。 在束线真空室的部分部分中从外部布置质量分析磁体单元。 质量分析磁体单元的有效磁场面积设置在束线结构的局部剖面中。 连续尖点场形成磁体装置布置在束线结构的束线真空室系列的一部分中，以通过形成连续尖点场来限制离子束。

公开(公告)号：US06794661B2

公开(公告)日：2004-09-21

申请号：US10118064

申请日：2002-04-09

申请人： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Michiro Sugitani ,  Hiroki Murooka ,  Hiroshi Matsushita

发明人： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Michiro Sugitani ,  Hiroki Murooka ,  Hiroshi Matsushita

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  G21K1/08 ,  H01J2237/004

摘要： In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.

摘要翻译： 在根据本发明的离子注入装置中，借助于提取电极从离子源提取离子。 通过质量分析磁体装置和质量分析狭缝对由此提取的离子进行质量分析，从而将所需的离子注入到基板中。 用于产生尖点磁场的磁体沿着从质量分析磁铁装置的前部延伸到后部的离子束线串联设置。