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公开(公告)号：US20110123877A1
公开(公告)日：2011-05-26
申请号：US12674328
申请日：2008-08-05
申请人： Masashi Matsumoto , Hideto Imai , Yasuharu Okamoto , Tetsuaki Hirayama , Masahiro Suguro , Sadanori Kuroshima , Takashi Manako
发明人： Masashi Matsumoto , Hideto Imai , Yasuharu Okamoto , Tetsuaki Hirayama , Masahiro Suguro , Sadanori Kuroshima , Takashi Manako
CPC分类号： B01J31/1835 , B01J31/1691 , B01J31/183 , B01J2231/62 , B01J2531/0216 , B01J2531/0238 , B01J2531/16 , B01J2531/17 , B01J2531/18 , B01J2531/35 , B01J2531/46 , B01J2531/48 , B01J2531/56 , B01J2531/57 , B01J2531/62 , B01J2531/64 , B01J2531/72 , B01J2531/821 , B01J2531/822 , B01J2531/824 , B01J2531/827 , B01J2531/828 , B01J2531/842 , B01J2531/845 , B01J2531/847 , H01M4/9008 , H01M12/06 , H01M2008/1095
摘要： An oxygen reduction catalyst and the catalyst as an electrode catalyst are provided. The oxygen reduction catalyst is characterized by including an organometallic polymer structure in which a transition metal or zinc is coordinated with an organic polymer compound including a ligand comprising a heterocyclic 5-membered ring or a heterocyclic 6-membered ring containing at least not less than two elements selected from nitrogen (N), oxygen (O), sulfur (S), and selenium (Se), and derivatives thereof. Thereby, even when an amount of a metal is smaller than that in a platinum particulate catalyst, an oxygen reduction capacity equal to or more than that of the platinum particulate catalyst can be obtained. Further, by coordinating a metal with an organic polymer, stability in an oxygen reduction condition can be significantly improved compared to the case of metal based macrocyclic compounds.
摘要翻译： 提供氧还原催化剂和作为电极催化剂的催化剂。 氧还原催化剂的特征在于包括有机金属聚合物结构，其中过渡金属或锌与包括含有杂环5元环的配体的有机高分子化合物或至少含有两个以上的杂环的6元环配位 选自氮（N），氧（O），硫（S）和硒（Se）的元素及其衍生物。 因此，即使当金属量比铂粒子催化剂少时，也可以获得等于或大于铂粒子催化剂的氧还原能力。 此外，通过将金属与有机聚合物配位，与金属基大环化合物的情况相比，可以显着提高氧还原条件下的稳定性。
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公开(公告)号：US20120252194A1
公开(公告)日：2012-10-04
申请号：US13432936
申请日：2012-03-28
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/3172 , H01J2237/30483 , H01J2237/31701 , H01J2237/31706
摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
摘要翻译： 离子注入方法包括：对离子束进行往复扫描，在垂直于光束扫描方向的方向上机械地扫描晶片，以及将离子注入晶片。 将晶片分割为多个注入区域，对于每个注入区域，将波束扫描方向的波束扫描速度设定为变化，通过改变和控制每个注入区域的离子注入量分布来控制 光束扫描速度，并且对每个注入区域的离子注入量进行控制，并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定 机械扫描速度并控制每个注入区域的晶片机械扫描速度。
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公开(公告)号：US08772741B2
公开(公告)日：2014-07-08
申请号：US13432936
申请日：2012-03-28
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/3172 , H01J2237/30483 , H01J2237/31701 , H01J2237/31706
摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
摘要翻译： 离子注入方法包括：对离子束进行往复扫描，在垂直于光束扫描方向的方向上机械地扫描晶片，以及将离子注入晶片。 将晶片分割为多个注入区域，对于每个注入区域，将波束扫描方向的波束扫描速度设定为变化，通过改变和控制每个注入区域的离子注入量分布来控制 光束扫描速度，并且对每个注入区域的离子注入量进行控制，并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定 机械扫描速度并控制每个注入区域的晶片机械扫描速度。
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