Transparent conductive film and process for producing the film
    1.
    发明授权
    Transparent conductive film and process for producing the film 失效
    透明导电膜及其制造方法

    公开(公告)号:US06641937B1

    公开(公告)日:2003-11-04

    申请号:US09710482

    申请日:2000-11-09

    IPC分类号: B32B1500

    摘要: The present invention is for a transparent conductive film of nitrogen-containing indium tin oxide 5 nm to 100 &mgr;m thick formed on a substrate. The process for producing the transparent film includes exciting the surface of the substrate in a vacuum and depositing vaporized indium tin oxide on the surface of the substrate. The surface may be excited with irradiation with an ion beam. The indium tin oxide may be deposited through vacuum deposition, laser abrasion, ion plating, ion beam deposition, or chemical vapor deposition. Vapor deposition of indium tin oxide may be performed using a sintered product of indium oxide and tin oxide or with indium metal and tin metal.

    摘要翻译: 本发明是在基板上形成5nm〜100μm厚的含氮铟锡氧化物的透明导电膜。 制造透明膜的方法包括在真空中激发衬底的表面并在衬底的表面上沉积蒸发的氧化铟锡。 可以用离子束照射激发表面。 铟锡氧化物可以通过真空沉积,激光磨蚀,离子镀,离子束沉积或化学气相沉积沉积。 铟锡氧化物的气相沉积可以使用氧化铟和氧化锡的烧结产物或铟金属和锡金属进行。