公开(公告)号：US09995864B2

公开(公告)日：2018-06-12

申请号：US15078695

申请日：2016-03-23

申请人： Moxtek, Inc.

发明人： Anubhav Diwan ,  Matt Linford ,  Fred Lane ,  Matthew C. George

IPC分类号： G02B5/30 ,  G02B1/14 ,  G02B1/18 ,  C09D5/08 ,  C09D183/02 ,  C09D183/04 ,  C09D185/02 ,  C23C14/06 ,  C23C14/08 ,  C23C16/30 ,  C23C16/32 ,  G02B1/04 ,  C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  B05D5/08 ,  B05D1/00

CPC分类号： G02B5/3058 ,  B05D1/60 ,  B05D5/08 ,  C09D5/084 ,  C09D183/02 ,  C09D183/04 ,  C09D185/02 ,  C23C14/0635 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45555 ,  G02B1/04 ,  G02B1/14 ,  G02B1/18

摘要： A wire grid polarizer (WGP) can have a conformal-coating to protect the WGP from at least one of the following: corrosion, dust, and damage due to tensile forces in a liquid on the WGP. The conformal-coating can include a silane conformal-coating with chemical formula (1), chemical formula (2), or combinations thereof: A method of applying a conformal-coating over a WGP can include exposing the WGP to Si(R1)d(R2)e(R3)g. In the above WGP and method, X can be a bond to the ribs; each R1 can be a hydrophobic group; each R3, if any, can be any chemical element or group; d can be 1, 2, or 3, e can be 1, 2, or 3, g can be 0, 1, or 2, and d+e+g=4; R2 can be a silane-reactive-group; and each R6 can be an alkyl group, an aryl group, or combinations thereof.

公开(公告)号：US20180157162A1

公开(公告)日：2018-06-07

申请号：US15371904

申请日：2016-12-07

申请人： FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES ,  INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS

发明人： Valerio PRUNERI ,  Rinu Abraham MANIYARA

IPC分类号： G03F1/38 ,  G03F1/22 ,  C23C14/06 ,  C23C14/24 ,  C23C16/34 ,  C23C16/30

CPC分类号： G03F1/38 ,  C23C14/0641 ,  C23C14/0676 ,  G03F1/22 ,  G03F1/40

摘要： The present invention is directed to compositions for photolithographic masks comprising a substrate and a coating having at least one electrical conducting layer comprising a metal nitride of the formula MNy, wherein M is a metal and y is greater than zero and less than 1, and methods of making the same.

公开(公告)号：US09946153B2

公开(公告)日：2018-04-17

申请号：US15268818

申请日：2016-09-19

申请人： HOYA CORPORATION

发明人： Teiichiro Umezawa ,  Masafumi Ishiyama

IPC分类号： G03F1/26 ,  G03F1/32 ,  C23C14/00 ,  C23C14/06 ,  C23C14/22

CPC分类号： G03F1/32 ,  C23C14/0036 ,  C23C14/0676 ,  C23C14/225 ,  G03F1/26

摘要： Provided is a mask blank in which a thin film for transfer pattern formation is provided on a main surface of a transparent substrate. The thin film is made of a material containing a transition metal and silicon and further containing at least one of oxygen and nitrogen. The thin film has as its surface layer an oxide layer with an oxygen content higher than that of the thin film of a region other than the surface layer. The thin film is formed so that the thickness of its outer peripheral portion is greater than that of its central portion on the main surface side. The oxide layer is formed so that the thickness of its outer peripheral portion is greater than that of its central portion on the main surface side.

公开(公告)号：US09897911B2

公开(公告)日：2018-02-20

申请号：US15232365

申请日：2016-08-09

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Takuro Kosaka

IPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/80 ,  C23C14/06 ,  G03F7/20 ,  C23C14/00 ,  C23C14/34

CPC分类号： G03F1/32 ,  C23C14/0036 ,  C23C14/0676 ,  C23C14/3464 ,  G03F1/26 ,  G03F1/80 ,  G03F7/70783

摘要： A halftone phase shift photomask blank is provided comprising a transparent substrate and a halftone phase shift film thereon having a phase shift of 150-200° and a transmittance of 9-40%. The halftone phase shift film consists of a transition metal, Si, O and N, has an average transition metal content of at least 3 at %, and is composed of a plurality of layers including a stress relaxation layer having an oxygen content of at least 3 at % and a phase shift adjusting layer having a higher oxygen content of at least 5 at %.

公开(公告)号：US09890972B2

公开(公告)日：2018-02-13

申请号：US13643894

申请日：2010-04-28

申请人： Martin Andritschky ,  Luis Manuel Fernandes Rebouta ,  Kaj A. Pischow

发明人： Martin Andritschky ,  Luis Manuel Fernandes Rebouta ,  Kaj A. Pischow

IPC分类号： F24J2/48 ,  C23C14/58 ,  C23C14/02 ,  C23C14/00 ,  C23C14/06

CPC分类号： F24S70/20 ,  C23C14/0036 ,  C23C14/024 ,  C23C14/0641 ,  C23C14/0676 ,  C23C14/5853 ,  F24S70/25 ,  Y02E10/40

摘要： A method for providing a thermal absorber, which can be used in solar thermal collectors. The method includes a step of depositing on a substrate a first layer having a composition that comprises titanium, aluminium, nitrogen, and one of following elements: silicon, yttrium, cerium, and chromium. The method further optionally includes a step of depositing a second layer deposited on the first layer, the second layer having a composition including titanium, aluminium, nitrogen, oxygen and one of the elements of silicon, yttrium, cerium, and chromium, and a step of depositing a third layer having a composition including titanium, aluminium, silicon, nitrogen, and oxygen, the third layer being a top layer of the thermal absorber.

公开(公告)号：US09847485B2

公开(公告)日：2017-12-19

申请号：US15170549

申请日：2016-06-01

申请人： Samsung Display Co., Ltd.

发明人： Soohyun Min

IPC分类号： H01L51/52 ,  H01L51/00 ,  C23C14/04 ,  C23C14/06 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  H01L51/56 ,  C23C14/24 ,  H01L27/32

CPC分类号： H01L51/0011 ,  C23C14/042 ,  C23C14/0641 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/221 ,  C23C14/24 ,  C23C14/34 ,  H01L27/3244 ,  H01L51/5256 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5338

摘要： A mask frame assembly includes a frame, a first support bar, split masks, and a second support bar. The frame includes an opening. The first support bar spans the opening in a first direction, the first support bar includes first ends disposed on the frame. The split masks span the opening in a second direction crossing the first direction, the split masks include first portions disposed on the first support bar and second ends disposed on the frame. The second support bar is disposed on the first support bar, the second support bar being more magnetic than the first support bar.

公开(公告)号：US09822438B2

公开(公告)日：2017-11-21

申请号：US14672515

申请日：2015-03-30

申请人： Kennametal Inc.

发明人： Joern Kohlscheen

IPC分类号： C23C14/06 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  C23C28/04

CPC分类号： C23C14/0036 ,  C23C14/0057 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/3485 ,  C23C28/042 ,  C23C28/044

摘要： The invention relates to a method for producing a coated cutting tool in which a coating with at least one oxide layer is applied to a base layer by means of a PVD method. The method includes voltage-pulsed sputtering of at least one cathode metal selected from the group of aluminum, scandium, yttrium, silicon, zinc, titanium, zirconium, hafnium, chromium, niobium, and tantalum, as well as mixtures and alloys thereof in the presence of a reactive gas; and the depositing of at least one oxide layer formed by converting the reactive gas with the sputtered cathode metal onto the base body. The cathode metal includes at least aluminum. Dinitrogen oxide is used as the reactive gas. The at least one oxide layer is in the form of an oxide, mixed oxide, or oxide mixture of the at least one cathode metal.

公开(公告)号：US09812300B2

公开(公告)日：2017-11-07

申请号：US14312192

申请日：2014-06-23

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Hideo Kaneko

IPC分类号： H01J37/34 ,  C23C14/06 ,  C23C14/34 ,  C23C14/14

CPC分类号： H01J37/3426 ,  C23C14/0676 ,  C23C14/14 ,  C23C14/3407 ,  C23C14/3414

摘要： A silicon target for sputtering film formation which enables formation of a high-quality silicon-containing thin film by inhibiting dust generation during sputtering film formation is provided. An n-type silicon target material 10 and a metallic backing plate 20 are attached to each other via a bonding layer 40. A conductive layer 30 made of a material having a smaller work function than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on the bonding layer 40 side. That is, the silicon target material 10 is attached to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. In a case of single-crystal silicon, a work function of n-type silicon is generally 4.05 eV. A work function of a material of the conductive layer 30 needs to be smaller than 4.05 eV.

公开(公告)号：US09803891B2

公开(公告)日：2017-10-31

申请号：US14365303

申请日：2012-06-25

申请人： Harish Chandra Barshilia

发明人： Harish Chandra Barshilia

IPC分类号： F24J2/48 ,  C23C14/35 ,  C23C14/58 ,  C23C14/06 ,  C23C14/02 ,  C23C14/34 ,  C23C14/54 ,  C23C28/00 ,  F24J2/46

CPC分类号： F24S70/25 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0641 ,  C23C14/0676 ,  C23C14/345 ,  C23C14/352 ,  C23C14/548 ,  C23C14/5826 ,  C23C14/5873 ,  C23C28/322 ,  C23C28/345 ,  F24S70/30 ,  Y02E10/40 ,  Y02P80/24 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/31678

摘要： The present invention describes an improved multilayer solar selective coating useful for solar thermal power generation. Solar selective coating of present invention essentially consists of Ti/Chrome interlayer, two absorber layers (AlTiN and AlTiON) an anti-reflection layer (AlTiO). Coating deposition process uses Ti and Al as the source materials, which are abundantly available and easy to manufacture as sputtering targets for industrial applications. The present invention allows deposition of all the layers in a single sputtering chamber on flat and tubular substrates with high absorptance and low emittance, thus making the process simpler and cost effective. The process of the present invention can be up-scaled easily for deposition on longer tubes with good uniformity and reproducibility. The coating of the present invention also displays improved adhesion, UV stability, corrosion resistance and stability under extreme environments.

公开(公告)号：US20170297118A1

公开(公告)日：2017-10-19

申请号：US15516264

申请日：2015-09-29

申请人： Sumitomo Electric Industries, Ltd.

发明人： Akito Ishii ,  Satoru Kukino ,  Takashi Harada

IPC分类号： B23B27/14 ,  C23C14/08 ,  C23C14/06

CPC分类号： B23B27/148 ,  B23B27/14 ,  B23B2224/04 ,  B23B2226/125 ,  B23B2228/08 ,  C04B35/58 ,  C04B35/58007 ,  C04B35/581 ,  C04B35/5831 ,  C04B35/626 ,  C04B35/62685 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3865 ,  C04B2235/3869 ,  C04B2235/3886 ,  C04B2235/5445 ,  C04B2235/666 ,  C04B2235/761 ,  C04B2235/762 ,  C04B2235/767 ,  C04B2235/85 ,  C23C14/0641 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/325

摘要： There are provided: a sintered material having an excellent wear resistance even under a high speed cutting condition; a tool using the sintered material; and a method of producing the sintered material. The sintered material includes: a first particle group including a particle having a cubic rock-salt structure represented by Al(1-x)CrxN (formula (1)) (where x satisfies 0.2≦x≦0.8); and a second particle group including a particle of at least one first compound selected from a group consisting of oxide and oxynitride of aluminum, zirconium, yttrium, magnesium, and hafnium.