公开(公告)号：US20080238572A1

公开(公告)日：2008-10-02

申请号：US12078232

申请日：2008-03-28

申请人： Masayuki Funami ,  Takeshi Takanoshita ,  Yuuko Yokota

发明人： Masayuki Funami ,  Takeshi Takanoshita ,  Yuuko Yokota

IPC分类号： H03H9/72

CPC分类号： H03H9/6483 ,  H03H9/725

摘要： A surface acoustic wave device includes a first surface acoustic wave filter forming a ladder filter circuit; and a second surface acoustic wave filter having a passband at a frequency range higher than that of the first surface acoustic wave filter. The first surface acoustic wave filter includes a series-arm surface acoustic wave resonator, a parallel-arm surface acoustic wave resonator and an additional surface acoustic wave resonator. The series-arm surface acoustic wave resonator is on a series arm of the ladder filter circuit and includes an IDT electrode. The parallel-arm surface acoustic wave resonator is on a parallel arm of the ladder filter circuit and includes an IDT electrode. The additional surface acoustic wave resonator includes an IDT electrode, is connected in parallel with the series-arm surface acoustic wave resonator, and has a resonance frequency higher than the frequency range of the passband of the second surface acoustic wave filter.

摘要翻译： 表面声波装置包括形成梯形滤波器电路的第一声表面波滤波器; 以及具有比第一声表面波滤波器的频率高的通带的第二声表面波滤波器。 第一表面声波滤波器包括串联臂表面声波谐振器，平行臂声表面波谐振器和附加声表面波谐振器。 串联臂表面声波谐振器在梯形滤波电路的串联臂上，并包括IDT电极。 平行臂声表面波谐振器位于梯形滤波器电路的并联臂上，并包括IDT电极。 所述附加声表面波谐振器包括与所述串联臂声表面波谐振器并联的IDT电极，并且具有高于所述第二声表面波滤波器的通带的频率范围的谐振频率。