公开(公告)号：US10988842B2

公开(公告)日：2021-04-27

申请号：US16088046

申请日：2018-04-17

Applicant: Massachusetts Institute of Technology

Inventor： Brian J. Modtland ,  Jing Kong ,  Marc A. Baldo ,  Efren Navarro-Moratalla ,  Xiang Ji

IPC: C23C16/30

Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.

公开(公告)号：US20190330735A1

公开(公告)日：2019-10-31

申请号：US16088046

申请日：2018-04-17

Applicant: Massachusetts Institute of Technology

Inventor： Brian J. Modtland ,  Jing Kong ,  Marc A. Baldo ,  Efren Navarro-Moratalla ,  Xiang Ji

IPC: C23C16/30

Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.