In Situ Generation of Gaseous Precursors For Chemical Vapor Deposition of a Chalcogenide

    公开(公告)号:US20190338416A1

    公开(公告)日:2019-11-07

    申请号:US16382407

    申请日:2019-04-12

    Abstract: In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.

    In situ generation of gaseous precursors for chemical vapor deposition of a chalcogenide

    公开(公告)号:US11060186B2

    公开(公告)日:2021-07-13

    申请号:US16382407

    申请日:2019-04-12

    Abstract: In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.

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