公开(公告)号：US11231603B2

公开(公告)日：2022-01-25

申请号：US16826489

申请日：2020-03-23

Applicant: Massachusetts Institute of Technology

Inventor： Zhuoran Fang ,  Tian Gu ,  Juejun Hu ,  Junying Li ,  Yifei Zhang

IPC: G02F1/01 ,  C22C30/00 ,  G02F1/225 ,  C23C14/06 ,  G02F1/00 ,  G02F1/21

Abstract: An alloy of GexSbySezTem includes atoms of Ge, Sb, Se, and Te that form a crystalline structure having a plurality of vacancies randomly distributed in the crystalline structure. The alloy can be used to construct an optical device including a first waveguide to guide a light beam and a modulation layer disposed on the first waveguide. The modulation includes the alloy of GexSbySezTem which has a first refractive index n1 in an amorphous state and a second refractive index n2, greater than the first refractive index by at least 1, in a crystalline state. The first waveguide and the modulation layer are configured to guide about 1% to about 50% of the light beam in the modulation layer when the alloy is in the amorphous state and guide no optical mode when the alloy is in the crystalline state.