Reprogrammable integrated circuit (IC) with overwritable nonvolatile storage
    1.
    发明授权
    Reprogrammable integrated circuit (IC) with overwritable nonvolatile storage 失效
    具有可重写非易失性存储的可重复编程集成电路(IC)

    公开(公告)号:US07123517B2

    公开(公告)日:2006-10-17

    申请号:US10711819

    申请日:2004-10-07

    IPC分类号: G11C11/34 G11C16/06

    CPC分类号: G11C16/10 G11C16/28

    摘要: A reprogrammable integrated circuit (IC) including overwritable nonvolatile storage cells. Cell contents are compared in a differential sense amplifier against a variable reference signal that has a number of selectable reference levels corresponding to reprogrammed cell threshold voltages. With each write cycle the nonvolatile storage cells are overwritten and then, compared against a different, e.g., higher, selectable reference level.

    摘要翻译: 包括可重写非易失性存储单元的可重复编程集成电路(IC)。 在差分读出放大器中将单元内容与可变参考信号进行比较,该可变参考信号具有对应于重新编程的单元阈值电压的多个可选参考电平。 在每个写入周期中,非易失性存储单元被覆盖,然后与不同的,例如更高的可选参考电平进行比较。